Amorphous indium-zinc oxide semiconductor thin-film transistors

Jun Yi Li; Sheng Po Chang; Wen Chen Hua; Shoou Jinn Chang

doi:10.1166/jno.2014.1604

Amorphous indium-zinc oxide semiconductor thin-film transistors

Jun Yi Li
, Sheng Po Chang
, Wen Chen Hua
, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the performance and electrical properties of sputtering-processed amorphous indium- zinc oxide (α-IZO) thin-film transistors (TFTs). We were able to modulate the Ar and O components by changing the partial pressure. Additionally, the chemical composition of α-IZO had a significant effect on the field-effect mobility (μFE), carrier concentration, and subthreshold swing (SS) of the device. Sputtering-processed α-IZO TFTs were fabricated with an on/off current ratio of ∼10⁷, a high mobility of 38.7 cm²/Vs, and a subthreshold slope as steep as 0.16 V/dec. Our results indicate that high-performance α-IZO TFTs can be successfully and easily fabricated using the sputtering process.

Original language	English
Pages (from-to)	388-391
Number of pages	4
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	9
Issue number	3
DOIs	https://doi.org/10.1166/jno.2014.1604
Publication status	Published - 2014 Jun 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1166/jno.2014.1604

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title = "Amorphous indium-zinc oxide semiconductor thin-film transistors",

abstract = "We report on the performance and electrical properties of sputtering-processed amorphous indium- zinc oxide (α-IZO) thin-film transistors (TFTs). We were able to modulate the Ar and O components by changing the partial pressure. Additionally, the chemical composition of α-IZO had a significant effect on the field-effect mobility (μFE), carrier concentration, and subthreshold swing (SS) of the device. Sputtering-processed α-IZO TFTs were fabricated with an on/off current ratio of ∼107, a high mobility of 38.7 cm2/Vs, and a subthreshold slope as steep as 0.16 V/dec. Our results indicate that high-performance α-IZO TFTs can be successfully and easily fabricated using the sputtering process.",

author = "Li, \{Jun Yi\} and Chang, \{Sheng Po\} and Hua, \{Wen Chen\} and Chang, \{Shoou Jinn\}",

year = "2014",

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doi = "10.1166/jno.2014.1604",

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journal = "Journal of Nanoelectronics and Optoelectronics",

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T1 - Amorphous indium-zinc oxide semiconductor thin-film transistors

AU - Li, Jun Yi

AU - Chang, Sheng Po

AU - Hua, Wen Chen

AU - Chang, Shoou Jinn

PY - 2014/6/1

Y1 - 2014/6/1

N2 - We report on the performance and electrical properties of sputtering-processed amorphous indium- zinc oxide (α-IZO) thin-film transistors (TFTs). We were able to modulate the Ar and O components by changing the partial pressure. Additionally, the chemical composition of α-IZO had a significant effect on the field-effect mobility (μFE), carrier concentration, and subthreshold swing (SS) of the device. Sputtering-processed α-IZO TFTs were fabricated with an on/off current ratio of ∼107, a high mobility of 38.7 cm2/Vs, and a subthreshold slope as steep as 0.16 V/dec. Our results indicate that high-performance α-IZO TFTs can be successfully and easily fabricated using the sputtering process.

AB - We report on the performance and electrical properties of sputtering-processed amorphous indium- zinc oxide (α-IZO) thin-film transistors (TFTs). We were able to modulate the Ar and O components by changing the partial pressure. Additionally, the chemical composition of α-IZO had a significant effect on the field-effect mobility (μFE), carrier concentration, and subthreshold swing (SS) of the device. Sputtering-processed α-IZO TFTs were fabricated with an on/off current ratio of ∼107, a high mobility of 38.7 cm2/Vs, and a subthreshold slope as steep as 0.16 V/dec. Our results indicate that high-performance α-IZO TFTs can be successfully and easily fabricated using the sputtering process.

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DO - 10.1166/jno.2014.1604

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JO - Journal of Nanoelectronics and Optoelectronics

JF - Journal of Nanoelectronics and Optoelectronics

IS - 3

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Amorphous indium-zinc oxide semiconductor thin-film transistors

Abstract

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