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Amorphous indium-zinc oxide semiconductor thin-film transistors
Jun Yi Li
, Sheng Po Chang
, Wen Chen Hua
,
Shoou Jinn Chang
Innovation Headquarters
Center for Micro/Nano Science and Technology
Institute of Microelectronics
Research output
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Contribution to journal
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peer-review
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Keyphrases
IZO Thin-film Transistors
100%
Amorphous Indium Zinc Oxide
100%
Oxide Semiconductor Thin Film Transistor
100%
On-state Current
50%
High Performance
50%
Carrier Concentration
50%
Chemical Composition
50%
Electrical Properties
50%
High Mobility
50%
Field-effect Mobility
50%
Zinc Oxide Thin Films
50%
Subthreshold Swing
50%
Current Ratio
50%
Oxide Thin-film Transistors
50%
Partial Pressure
50%
Sputtering Process
50%
Performance Properties
50%
Subthreshold Slope
50%
Material Science
Indium
100%
Zinc Oxide
100%
Thin-Film Transistor
100%
Oxide Semiconductor
100%
Carrier Mobility
25%
Carrier Concentration
25%
Chemical Engineering
Film
100%
Indium
100%
Zinc Oxide
100%
Oxide Semiconductors
100%