Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga 2O3/SiO2 dielectric

T. H. Chang, C. J. Chiu, Shoou-Jinn Chang, T. Y. Tsai, T. H. Yang, Z. D. Huang, W. Y. Weng

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Abstract

This study investigates the electrical performance of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors with Ga2O 3 gate dielectric and applied on deep-ultraviolet phototransistors. To reduce the leakage current, we introduce the SiO2 interlayer dielectric, which effectively reduces the off-current. Under the illumination of 250 nm, the measured responsivity of the device was 3.2 A/W at an applied gate bias of 0 V. The photo-generated carriers were injected into the channel by the applied electric field and Fowler-Nordheim tunneling. A large photocurrent and responsivity can be obtained which is attributed to the high mobility of the a-IGZO channel.

Original languageEnglish
Article number221104
JournalApplied Physics Letters
Volume102
Issue number22
DOIs
Publication statusPublished - 2013 Jun 3

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Chang, T. H., Chiu, C. J., Chang, S-J., Tsai, T. Y., Yang, T. H., Huang, Z. D., & Weng, W. Y. (2013). Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga 2O3/SiO2 dielectric. Applied Physics Letters, 102(22), [221104]. https://doi.org/10.1063/1.4808164