Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga 2O3/SiO2 dielectric

T. H. Chang; C. J. Chiu; Shoou-Jinn Chang; T. Y. Tsai; T. H. Yang; Z. D. Huang; W. Y. Weng

doi:10.1063/1.4808164

Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga ₂O₃/SiO₂ dielectric

T. H. Chang, C. J. Chiu, Shoou-Jinn Chang, T. Y. Tsai, T. H. Yang, Z. D. Huang, W. Y. Weng

Research output: Contribution to journal › Article

42 Citations (Scopus)

Abstract

This study investigates the electrical performance of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors with Ga₂O ₃ gate dielectric and applied on deep-ultraviolet phototransistors. To reduce the leakage current, we introduce the SiO₂ interlayer dielectric, which effectively reduces the off-current. Under the illumination of 250 nm, the measured responsivity of the device was 3.2 A/W at an applied gate bias of 0 V. The photo-generated carriers were injected into the channel by the applied electric field and Fowler-Nordheim tunneling. A large photocurrent and responsivity can be obtained which is attributed to the high mobility of the a-IGZO channel.

Original language	English
Article number	221104
Journal	Applied Physics Letters
Volume	102
Issue number	22
DOIs	https://doi.org/10.1063/1.4808164
Publication status	Published - 2013 Jun 3

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4808164

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Chang, T. H., Chiu, C. J., Chang, S-J., Tsai, T. Y., Yang, T. H., Huang, Z. D., & Weng, W. Y. (2013). Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga ₂O₃/SiO₂ dielectric. Applied Physics Letters, 102(22), [221104]. https://doi.org/10.1063/1.4808164

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abstract = "This study investigates the electrical performance of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors with Ga2O 3 gate dielectric and applied on deep-ultraviolet phototransistors. To reduce the leakage current, we introduce the SiO2 interlayer dielectric, which effectively reduces the off-current. Under the illumination of 250 nm, the measured responsivity of the device was 3.2 A/W at an applied gate bias of 0 V. The photo-generated carriers were injected into the channel by the applied electric field and Fowler-Nordheim tunneling. A large photocurrent and responsivity can be obtained which is attributed to the high mobility of the a-IGZO channel.",

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AU - Chang, T. H.

AU - Chiu, C. J.

AU - Chang, Shoou-Jinn

AU - Tsai, T. Y.

AU - Yang, T. H.

AU - Huang, Z. D.

AU - Weng, W. Y.

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