Abstract
This study investigates the electrical performance of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors with Ga2O 3 gate dielectric and applied on deep-ultraviolet phototransistors. To reduce the leakage current, we introduce the SiO2 interlayer dielectric, which effectively reduces the off-current. Under the illumination of 250 nm, the measured responsivity of the device was 3.2 A/W at an applied gate bias of 0 V. The photo-generated carriers were injected into the channel by the applied electric field and Fowler-Nordheim tunneling. A large photocurrent and responsivity can be obtained which is attributed to the high mobility of the a-IGZO channel.
Original language | English |
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Article number | 221104 |
Journal | Applied Physics Letters |
Volume | 102 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2013 Jun 3 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)