Amorphous ITZO Thin-Film Transistors by Using Ultrasonic Spray Pyrolysis Deposition

Han Yin Liu, Wei Chou Hsu, Jui Hsuan Chen, Pei Huang Hsu, Ching Sung Lee

Research output: Contribution to journalArticlepeer-review

Abstract

This study demonstrates an amorphous indium-tin-zinc-oxide (a-ITZO) thin-film transistor (TFT) using an ultrasonic spray pyrolysis deposition (USPD) method. X-ray diffraction, X-ray photoelectron spectroscopy, Tauc plot, and photoluminescence spectrum are used to confirm the crystal structure, oxygen contents, energy bandgap, and the existence of oxygen deficiencies. Besides, these material characteristics are compared with a sputter-deposited ITZO film. The TFT based on the USPD-deposited ITZO shows better electrical performance than the TFT based on the sputter-deposited ITZO. In addition, the negative-/positive-bias illumination stress results indicate that the TFT based on the USPD-deposited ITZO film is more stable than the one based on the sputter-deposited ITZO.

Original languageEnglish
Article number8974445
Pages (from-to)1009-1013
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume67
Issue number3
DOIs
Publication statusPublished - 2020 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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