TY - JOUR
T1 - Amorphous ITZO Thin-Film Transistors by Using Ultrasonic Spray Pyrolysis Deposition
AU - Liu, Han Yin
AU - Hsu, Wei Chou
AU - Chen, Jui Hsuan
AU - Hsu, Pei Huang
AU - Lee, Ching Sung
N1 - Funding Information:
Manuscript received December 23, 2019; accepted January 8, 2020. Date of publication January 29, 2020; date of current version February 26, 2020. This work was supported by the Ministry of Science and Technology, Taiwan, under Contract MOST 106-2221-E-110-085-MY3. The review of this article was arranged by Editor R. M. Todi. (Corresponding author: Han-Yin Liu.) Han-Yin Liu and Pei-Huang Hsu are with the Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (e-mail: [email protected]).
Publisher Copyright:
© 2020 IEEE.
PY - 2020/3
Y1 - 2020/3
N2 - This study demonstrates an amorphous indium-tin-zinc-oxide (a-ITZO) thin-film transistor (TFT) using an ultrasonic spray pyrolysis deposition (USPD) method. X-ray diffraction, X-ray photoelectron spectroscopy, Tauc plot, and photoluminescence spectrum are used to confirm the crystal structure, oxygen contents, energy bandgap, and the existence of oxygen deficiencies. Besides, these material characteristics are compared with a sputter-deposited ITZO film. The TFT based on the USPD-deposited ITZO shows better electrical performance than the TFT based on the sputter-deposited ITZO. In addition, the negative-/positive-bias illumination stress results indicate that the TFT based on the USPD-deposited ITZO film is more stable than the one based on the sputter-deposited ITZO.
AB - This study demonstrates an amorphous indium-tin-zinc-oxide (a-ITZO) thin-film transistor (TFT) using an ultrasonic spray pyrolysis deposition (USPD) method. X-ray diffraction, X-ray photoelectron spectroscopy, Tauc plot, and photoluminescence spectrum are used to confirm the crystal structure, oxygen contents, energy bandgap, and the existence of oxygen deficiencies. Besides, these material characteristics are compared with a sputter-deposited ITZO film. The TFT based on the USPD-deposited ITZO shows better electrical performance than the TFT based on the sputter-deposited ITZO. In addition, the negative-/positive-bias illumination stress results indicate that the TFT based on the USPD-deposited ITZO film is more stable than the one based on the sputter-deposited ITZO.
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U2 - 10.1109/TED.2020.2965949
DO - 10.1109/TED.2020.2965949
M3 - Article
AN - SCOPUS:85080928040
SN - 0018-9383
VL - 67
SP - 1009
EP - 1013
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 3
M1 - 8974445
ER -