Amorphous RuW film as a diffusion barrier for advanced Cu metallization

Jia Bin Yeh; Dung-Ching Perng; Kuo Chung Hsu

doi:10.1149/1.3447739

Amorphous RuW film as a diffusion barrier for advanced Cu metallization

Jia Bin Yeh, Dung-Ching Perng, Kuo Chung Hsu

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8 Citations (Scopus)

Abstract

Barrier properties of 10 nm thick Ru and amorphous Ru_37.2W _62.8 films as seedless copper diffusion barriers have been investigated. Thermal stability of the barriers was evaluated after annealing at various temperatures. X-ray diffraction (XRD) analyses and sheet resistance measurements suggested that the Ru_37.2 W_62.8 barrier was thermally stable up to 700°C against Cu diffusion, which improved about 150°C over the Ru film. XRD studies and electron diffraction patterns of the Ru_37.2W_62.8 film showed that it maintained an amorphous-like microstructure after 30 min annealing at 550°C. This film started to recrystallize at about 600°C and developed to a film with Ru and WO₃ grains after a 700°C anneal. The leakage current of the 500°C postannealed Cu/RuW/porous SiOCH/Si stacked structure provided nearly 2 orders of magnitude superior than that of the Ru sample. The amorphous Ru _37.2W_62.8 film is an alternative candidate for the Cu direct platable seedless barrier in the advanced copper metallization process.

Original language	English
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	8
DOIs	https://doi.org/10.1149/1.3447739
Publication status	Published - 2010 Jul 23

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

Cite this

Yeh, J. B., Perng, D-C., & Hsu, K. C. (2010). Amorphous RuW film as a diffusion barrier for advanced Cu metallization. Journal of the Electrochemical Society, 157(8). https://doi.org/10.1149/1.3447739

@article{798b0860387c442dbb891455b930d61f,

title = "Amorphous RuW film as a diffusion barrier for advanced Cu metallization",

abstract = "Barrier properties of 10 nm thick Ru and amorphous Ru37.2W 62.8 films as seedless copper diffusion barriers have been investigated. Thermal stability of the barriers was evaluated after annealing at various temperatures. X-ray diffraction (XRD) analyses and sheet resistance measurements suggested that the Ru37.2 W62.8 barrier was thermally stable up to 700°C against Cu diffusion, which improved about 150°C over the Ru film. XRD studies and electron diffraction patterns of the Ru37.2W62.8 film showed that it maintained an amorphous-like microstructure after 30 min annealing at 550°C. This film started to recrystallize at about 600°C and developed to a film with Ru and WO3 grains after a 700°C anneal. The leakage current of the 500°C postannealed Cu/RuW/porous SiOCH/Si stacked structure provided nearly 2 orders of magnitude superior than that of the Ru sample. The amorphous Ru 37.2W62.8 film is an alternative candidate for the Cu direct platable seedless barrier in the advanced copper metallization process.",

author = "Yeh, {Jia Bin} and Dung-Ching Perng and Hsu, {Kuo Chung}",

year = "2010",

month = jul

day = "23",

doi = "10.1149/1.3447739",

language = "English",

volume = "157",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "8",

}

TY - JOUR

T1 - Amorphous RuW film as a diffusion barrier for advanced Cu metallization

AU - Yeh, Jia Bin

AU - Perng, Dung-Ching

AU - Hsu, Kuo Chung

PY - 2010/7/23

Y1 - 2010/7/23

N2 - Barrier properties of 10 nm thick Ru and amorphous Ru37.2W 62.8 films as seedless copper diffusion barriers have been investigated. Thermal stability of the barriers was evaluated after annealing at various temperatures. X-ray diffraction (XRD) analyses and sheet resistance measurements suggested that the Ru37.2 W62.8 barrier was thermally stable up to 700°C against Cu diffusion, which improved about 150°C over the Ru film. XRD studies and electron diffraction patterns of the Ru37.2W62.8 film showed that it maintained an amorphous-like microstructure after 30 min annealing at 550°C. This film started to recrystallize at about 600°C and developed to a film with Ru and WO3 grains after a 700°C anneal. The leakage current of the 500°C postannealed Cu/RuW/porous SiOCH/Si stacked structure provided nearly 2 orders of magnitude superior than that of the Ru sample. The amorphous Ru 37.2W62.8 film is an alternative candidate for the Cu direct platable seedless barrier in the advanced copper metallization process.

AB - Barrier properties of 10 nm thick Ru and amorphous Ru37.2W 62.8 films as seedless copper diffusion barriers have been investigated. Thermal stability of the barriers was evaluated after annealing at various temperatures. X-ray diffraction (XRD) analyses and sheet resistance measurements suggested that the Ru37.2 W62.8 barrier was thermally stable up to 700°C against Cu diffusion, which improved about 150°C over the Ru film. XRD studies and electron diffraction patterns of the Ru37.2W62.8 film showed that it maintained an amorphous-like microstructure after 30 min annealing at 550°C. This film started to recrystallize at about 600°C and developed to a film with Ru and WO3 grains after a 700°C anneal. The leakage current of the 500°C postannealed Cu/RuW/porous SiOCH/Si stacked structure provided nearly 2 orders of magnitude superior than that of the Ru sample. The amorphous Ru 37.2W62.8 film is an alternative candidate for the Cu direct platable seedless barrier in the advanced copper metallization process.

UR - http://www.scopus.com/inward/record.url?scp=77954737340&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954737340&partnerID=8YFLogxK

U2 - 10.1149/1.3447739

DO - 10.1149/1.3447739

M3 - Article

AN - SCOPUS:77954737340

VL - 157

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 8

ER -

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10.1149/1.3447739