TY - JOUR
T1 - Amorphous TiO2-based thin-film phototransistor
AU - Liu, Han Yin
AU - Huang, Ruei Chin
AU - Li, Yi Ying
AU - Lee, Ching Sung
AU - Hsu, Wei Chou
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan, under the Contract MOST 104-2218-E-035-009.
Publisher Copyright:
© 2017 IEEE.
PY - 2017/6
Y1 - 2017/6
N2 - This letter presents amorphous TiO2-based thin-film phototransistors whose structures are designed for front-side and back-side illumination. The channel and gate dielectric layers are deposited by ultrasonic spray pyrolysisdeposition,which is a non-vacuum, cost-effective, thin-film deposition technique similar to chemical vapor deposition. The material structure, chemical composition, and optical characteristics of the amorphous TiO2 thin film are analyzed. The phototransistor shows the typical current-voltage (I-V) characteristics of field-effect transistors. It demonstrates a UV-to-visible rejection ratio of approximately 70 -80, a high responsivity of 13.64 A/W, and a high detectivity of 1.64 × 1012 Jones. The phototransistor can be operated in the high-photo-responsivity and highdetectivitymodes by biasing at different quiescent points.
AB - This letter presents amorphous TiO2-based thin-film phototransistors whose structures are designed for front-side and back-side illumination. The channel and gate dielectric layers are deposited by ultrasonic spray pyrolysisdeposition,which is a non-vacuum, cost-effective, thin-film deposition technique similar to chemical vapor deposition. The material structure, chemical composition, and optical characteristics of the amorphous TiO2 thin film are analyzed. The phototransistor shows the typical current-voltage (I-V) characteristics of field-effect transistors. It demonstrates a UV-to-visible rejection ratio of approximately 70 -80, a high responsivity of 13.64 A/W, and a high detectivity of 1.64 × 1012 Jones. The phototransistor can be operated in the high-photo-responsivity and highdetectivitymodes by biasing at different quiescent points.
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U2 - 10.1109/LED.2017.2694001
DO - 10.1109/LED.2017.2694001
M3 - Article
AN - SCOPUS:85021733044
SN - 0741-3106
VL - 38
SP - 756
EP - 759
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 6
M1 - 7898432
ER -