Abstract
The performance of W40Re40B20 metallic amorphous thin film alloys as diffusion barriers between monocrystalline silicon substrates (<Si>) and aluminum or copper overlayers is reported. The films are deposited using d.c. and r.f. magnetron co-sputtering. Their crystallization temperature and resistivity are about 900°C and 200 μohmscm, respectively. The <Si>/W40Re40B20/Al and <Si>/W40Re40B20/Cu metallizations were vacuum-annealed at different temperatures for 30 min and characterized by 4He backscattering spectrometry, X-ray diffraction, scanning electron microscopy in combination with energy-dispersive analysis of X-rays, and electrical measurements on shallow junction diodes. The <Si>/W40Re40B20/Al structure was stable up to 500 °C and failed at 550 °C due to chemical reactions between the barrier and aluminum. A formation of cracks in the bilayer <Si>/W40Re40B20/Cu structure is responsible for its failure at 600 °C. The results demonstrate that it is fruitless to raise the crystallization temperature of an amorphous metallic film if its ability to react with the adjacent materials is not suppressed as well.
| Original language | English |
|---|---|
| Pages (from-to) | 301-305 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 236 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 1993 Dec 15 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Amorphous W40Re40B20 diffusion barriers for <Si>/Al and <Si>/Cu metallizations. / Kolawa, E.; Sun, X.; Reid, J. S.; Chen, Jen-Sue; Nicolet, M. A.; Ruiz, R.
In: Thin Solid Films, Vol. 236, No. 1-2, 15.12.1993, p. 301-305.Research output: Contribution to journal › Article
TY - JOUR
T1 - Amorphous W40Re40B20 diffusion barriers for <Si>/Al and <Si>/Cu metallizations
AU - Kolawa, E.
AU - Sun, X.
AU - Reid, J. S.
AU - Chen, Jen-Sue
AU - Nicolet, M. A.
AU - Ruiz, R.
PY - 1993/12/15
Y1 - 1993/12/15
N2 - The performance of W40Re40B20 metallic amorphous thin film alloys as diffusion barriers between monocrystalline silicon substrates (<Si>) and aluminum or copper overlayers is reported. The films are deposited using d.c. and r.f. magnetron co-sputtering. Their crystallization temperature and resistivity are about 900°C and 200 μohmscm, respectively. The <Si>/W40Re40B20/Al and <Si>/W40Re40B20/Cu metallizations were vacuum-annealed at different temperatures for 30 min and characterized by 4He backscattering spectrometry, X-ray diffraction, scanning electron microscopy in combination with energy-dispersive analysis of X-rays, and electrical measurements on shallow junction diodes. The <Si>/W40Re40B20/Al structure was stable up to 500 °C and failed at 550 °C due to chemical reactions between the barrier and aluminum. A formation of cracks in the bilayer <Si>/W40Re40B20/Cu structure is responsible for its failure at 600 °C. The results demonstrate that it is fruitless to raise the crystallization temperature of an amorphous metallic film if its ability to react with the adjacent materials is not suppressed as well.
AB - The performance of W40Re40B20 metallic amorphous thin film alloys as diffusion barriers between monocrystalline silicon substrates (<Si>) and aluminum or copper overlayers is reported. The films are deposited using d.c. and r.f. magnetron co-sputtering. Their crystallization temperature and resistivity are about 900°C and 200 μohmscm, respectively. The <Si>/W40Re40B20/Al and <Si>/W40Re40B20/Cu metallizations were vacuum-annealed at different temperatures for 30 min and characterized by 4He backscattering spectrometry, X-ray diffraction, scanning electron microscopy in combination with energy-dispersive analysis of X-rays, and electrical measurements on shallow junction diodes. The <Si>/W40Re40B20/Al structure was stable up to 500 °C and failed at 550 °C due to chemical reactions between the barrier and aluminum. A formation of cracks in the bilayer <Si>/W40Re40B20/Cu structure is responsible for its failure at 600 °C. The results demonstrate that it is fruitless to raise the crystallization temperature of an amorphous metallic film if its ability to react with the adjacent materials is not suppressed as well.
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U2 - 10.1016/0040-6090(93)90686-J
DO - 10.1016/0040-6090(93)90686-J
M3 - Article
VL - 236
SP - 301
EP - 305
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -