Amorphous W40Re40B20 diffusion barriers for <Si>/Al and <Si>/Cu metallizations

E. Kolawa, X. Sun, J. S. Reid, Jen-Sue Chen, M. A. Nicolet, R. Ruiz

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The performance of W40Re40B20 metallic amorphous thin film alloys as diffusion barriers between monocrystalline silicon substrates (<Si>) and aluminum or copper overlayers is reported. The films are deposited using d.c. and r.f. magnetron co-sputtering. Their crystallization temperature and resistivity are about 900°C and 200 μohmscm, respectively. The <Si>/W40Re40B20/Al and <Si>/W40Re40B20/Cu metallizations were vacuum-annealed at different temperatures for 30 min and characterized by 4He backscattering spectrometry, X-ray diffraction, scanning electron microscopy in combination with energy-dispersive analysis of X-rays, and electrical measurements on shallow junction diodes. The <Si>/W40Re40B20/Al structure was stable up to 500 °C and failed at 550 °C due to chemical reactions between the barrier and aluminum. A formation of cracks in the bilayer <Si>/W40Re40B20/Cu structure is responsible for its failure at 600 °C. The results demonstrate that it is fruitless to raise the crystallization temperature of an amorphous metallic film if its ability to react with the adjacent materials is not suppressed as well.

Original languageEnglish
Pages (from-to)301-305
Number of pages5
JournalThin Solid Films
Volume236
Issue number1-2
DOIs
Publication statusPublished - 1993 Dec 15

Fingerprint

Diffusion barriers
Metallizing
Amorphous films
Crystallization
Aluminum
crystallization
Monocrystalline silicon
aluminum
junction diodes
Metallic films
Backscattering
Temperature
electrical measurement
Spectrometry
x ray spectroscopy
Sputtering
temperature
Copper
Chemical reactions
chemical reactions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kolawa, E. ; Sun, X. ; Reid, J. S. ; Chen, Jen-Sue ; Nicolet, M. A. ; Ruiz, R. / Amorphous W40Re40B20 diffusion barriers for <Si>/Al and <Si>/Cu metallizations. In: Thin Solid Films. 1993 ; Vol. 236, No. 1-2. pp. 301-305.
@article{f8fc56d906b94ad59a1591c8789026d6,
title = "Amorphous W40Re40B20 diffusion barriers for <Si>/Al and <Si>/Cu metallizations",
abstract = "The performance of W40Re40B20 metallic amorphous thin film alloys as diffusion barriers between monocrystalline silicon substrates (<Si>) and aluminum or copper overlayers is reported. The films are deposited using d.c. and r.f. magnetron co-sputtering. Their crystallization temperature and resistivity are about 900°C and 200 μohmscm, respectively. The <Si>/W40Re40B20/Al and <Si>/W40Re40B20/Cu metallizations were vacuum-annealed at different temperatures for 30 min and characterized by 4He backscattering spectrometry, X-ray diffraction, scanning electron microscopy in combination with energy-dispersive analysis of X-rays, and electrical measurements on shallow junction diodes. The <Si>/W40Re40B20/Al structure was stable up to 500 °C and failed at 550 °C due to chemical reactions between the barrier and aluminum. A formation of cracks in the bilayer <Si>/W40Re40B20/Cu structure is responsible for its failure at 600 °C. The results demonstrate that it is fruitless to raise the crystallization temperature of an amorphous metallic film if its ability to react with the adjacent materials is not suppressed as well.",
author = "E. Kolawa and X. Sun and Reid, {J. S.} and Jen-Sue Chen and Nicolet, {M. A.} and R. Ruiz",
year = "1993",
month = "12",
day = "15",
doi = "10.1016/0040-6090(93)90686-J",
language = "English",
volume = "236",
pages = "301--305",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

Amorphous W40Re40B20 diffusion barriers for <Si>/Al and <Si>/Cu metallizations. / Kolawa, E.; Sun, X.; Reid, J. S.; Chen, Jen-Sue; Nicolet, M. A.; Ruiz, R.

In: Thin Solid Films, Vol. 236, No. 1-2, 15.12.1993, p. 301-305.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Amorphous W40Re40B20 diffusion barriers for <Si>/Al and <Si>/Cu metallizations

AU - Kolawa, E.

AU - Sun, X.

AU - Reid, J. S.

AU - Chen, Jen-Sue

AU - Nicolet, M. A.

AU - Ruiz, R.

PY - 1993/12/15

Y1 - 1993/12/15

N2 - The performance of W40Re40B20 metallic amorphous thin film alloys as diffusion barriers between monocrystalline silicon substrates (<Si>) and aluminum or copper overlayers is reported. The films are deposited using d.c. and r.f. magnetron co-sputtering. Their crystallization temperature and resistivity are about 900°C and 200 μohmscm, respectively. The <Si>/W40Re40B20/Al and <Si>/W40Re40B20/Cu metallizations were vacuum-annealed at different temperatures for 30 min and characterized by 4He backscattering spectrometry, X-ray diffraction, scanning electron microscopy in combination with energy-dispersive analysis of X-rays, and electrical measurements on shallow junction diodes. The <Si>/W40Re40B20/Al structure was stable up to 500 °C and failed at 550 °C due to chemical reactions between the barrier and aluminum. A formation of cracks in the bilayer <Si>/W40Re40B20/Cu structure is responsible for its failure at 600 °C. The results demonstrate that it is fruitless to raise the crystallization temperature of an amorphous metallic film if its ability to react with the adjacent materials is not suppressed as well.

AB - The performance of W40Re40B20 metallic amorphous thin film alloys as diffusion barriers between monocrystalline silicon substrates (<Si>) and aluminum or copper overlayers is reported. The films are deposited using d.c. and r.f. magnetron co-sputtering. Their crystallization temperature and resistivity are about 900°C and 200 μohmscm, respectively. The <Si>/W40Re40B20/Al and <Si>/W40Re40B20/Cu metallizations were vacuum-annealed at different temperatures for 30 min and characterized by 4He backscattering spectrometry, X-ray diffraction, scanning electron microscopy in combination with energy-dispersive analysis of X-rays, and electrical measurements on shallow junction diodes. The <Si>/W40Re40B20/Al structure was stable up to 500 °C and failed at 550 °C due to chemical reactions between the barrier and aluminum. A formation of cracks in the bilayer <Si>/W40Re40B20/Cu structure is responsible for its failure at 600 °C. The results demonstrate that it is fruitless to raise the crystallization temperature of an amorphous metallic film if its ability to react with the adjacent materials is not suppressed as well.

UR - http://www.scopus.com/inward/record.url?scp=0027800794&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027800794&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(93)90686-J

DO - 10.1016/0040-6090(93)90686-J

M3 - Article

VL - 236

SP - 301

EP - 305

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -