An Al2O3 AlGaAs/InGaAs metal-oxide-semiconductor phemt spdt switch with low control currents for wireless communication applications

Yun Chi Wu, Yueh Chin Lin, Edward Yi Chang, C. T. Lee, Chi Chung Kei, Chia Ta Chang, H. T. Hsu

Research output: Contribution to journalArticlepeer-review

Abstract

An AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) single-pole-double-throw (SPDT) switch using Al2 O3 high- κ gate dielectric by atomic layer deposition is fabricated. The MOS-PHEMT exhibited a comparable dc performance and a much lower gate current compared to PHEMT. Radio-frequency (rf) test shows that the MOS-PHEMT switch has an insertion loss of less than 0.5 dB, an isolation larger than 30 dB, a return loss larger than 15 dB, and an input power for 1 dB compression of 31.4 dBm at 2.5 GHz. Overall, MOS-PHEMT monolithic microwave integrated circuits switches have comparable rf performance to PHEMT switches but with much lower dc power consumption.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume13
Issue number6
DOIs
Publication statusPublished - 2010 Apr 27

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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