An (AlxGa1-x)2O3 metal-semiconductor-metal VUV photodetector

W. Y. Weng, T. J. Hsueh, S. J. Chang, S. C. Hung, G. J. Huang, H. T. Hsueh, Z. D. Huang, C. J. Chiu

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


The authors report the conversion of AlGaN epitaxial layer into (Al xGa1-x)2O3 thin film by furnace oxidation at high temperature in oxygen containing ambient. A vacuum-ultraviolet (AlxGa1-x)2O3 photodetector (PD) was also fabricated. It was found that external quantum efficiency of the fabricated PD measured at 220 nm was 30%. It was found that the fabricated PD exhibits extremely large deep-UV-to-visible rejection ratio.

Original languageEnglish
Article number5682369
Pages (from-to)1795-1799
Number of pages5
JournalIEEE Sensors Journal
Issue number9
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering


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