The authors report the conversion of AlGaN epitaxial layer into (Al xGa1-x)2O3 thin film by furnace oxidation at high temperature in oxygen containing ambient. A vacuum-ultraviolet (AlxGa1-x)2O3 photodetector (PD) was also fabricated. It was found that external quantum efficiency of the fabricated PD measured at 220 nm was 30%. It was found that the fabricated PD exhibits extremely large deep-UV-to-visible rejection ratio.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering