TY - JOUR
T1 - An ambipolar to n-type transformation in pentacene-based organic field-effect transistors
AU - Chang, Jer Wei
AU - Liang, Po Wei
AU - Lin, Min Wei
AU - Guo, Tzung Fang
AU - Wen, Ten Chin
AU - Hsu, Yao Jane
N1 - Funding Information:
The authors would like to thank the National Science Council (NSC) of Taiwan ( NSC99-2113-M-006-008-MY3 ) and the Asian Office of Aerospace Research and Development ( AOARD-10-4054 ) for financially supporting this research. AFM measurements in National Chung Cheng University, Prof. Yean-Ren Jeng’s laboratory are highly appreciated.
PY - 2011/3
Y1 - 2011/3
N2 - We report an ambipolar to n-type transformation in pentacene-based organic field-effect transistors (OFETs) of aluminum (Al) source-drain electrodes. The hole currents of the ambipolar OFETs were decreased by over two orders of magnitude within 24 h after the device fabrication, but the electron currents remained unchanged, which makes the devices present n-type only characteristics. The transformation is correlated with the interfacial interactions between Al electrodes and pentacene, as characterized by analyzing near-edge X-ray absorption fine structure spectra and Micro-Raman spectra. This study highlights the importance of metal/organic interfaces in the performance of OFETs, and demonstrates decent n-type pentacene-based OFETs with electron mobility of 0.1 cm2/V/s with proper annealing treatment.
AB - We report an ambipolar to n-type transformation in pentacene-based organic field-effect transistors (OFETs) of aluminum (Al) source-drain electrodes. The hole currents of the ambipolar OFETs were decreased by over two orders of magnitude within 24 h after the device fabrication, but the electron currents remained unchanged, which makes the devices present n-type only characteristics. The transformation is correlated with the interfacial interactions between Al electrodes and pentacene, as characterized by analyzing near-edge X-ray absorption fine structure spectra and Micro-Raman spectra. This study highlights the importance of metal/organic interfaces in the performance of OFETs, and demonstrates decent n-type pentacene-based OFETs with electron mobility of 0.1 cm2/V/s with proper annealing treatment.
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U2 - 10.1016/j.orgel.2010.12.018
DO - 10.1016/j.orgel.2010.12.018
M3 - Article
AN - SCOPUS:78951475021
VL - 12
SP - 509
EP - 515
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
IS - 3
ER -