An Amorphous (Al0.12Ga0.88)2O3Deep Ultraviolet Photodetector

Shu Bai Liu, Shoou Jinn Chang, Sheng Po Chang, Chia Hsun Chen

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1 Citation (Scopus)

Abstract

The authors report the deposition of an (AlxGa1-x)2O3 amorphous thin film on sapphire substrates by sputter deposition. An amorphous deep ultraviolet (UV) (Al0.12Ga0.88)2O3 photodetector, with a cutoff wavelength at 230 nm, was also fabricated. With -10 V applied bias, it was found the dark leakage current and the linear dynamic range (LDR) of the fabricated photodetector were about 1.23 × 10-9 A and 59.51 dB, respectively. With the same -10 V applied bias, the UVC/UVA contrast ratio was larger than 20. With λillumination = 230 nm and -5 V applied bias, it was found noise equivalent power (NEP) and detectivity (D∗) of the fabricated amorphous deep UV (Al0.12Ga0.88)2O3 photodetector were 9.94 × 10-11 W and 2.11 × 1010 cmHz1/2W-1, respectively. These results suggest the fabricated amorphous deep UV (Al0.12Ga0.88)2O3 photodetector herein indicate a cost-effective solution for developing DUV photodetector applications.

Original languageEnglish
Article number9115846
JournalIEEE Photonics Journal
Volume12
Issue number4
DOIs
Publication statusPublished - 2020 Aug

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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