An analytic three-terminal band-to-band tunneling model on GIDL in MOSFET

Ja Hao Chen, Shyh Chyi Wong, Yeong Her Wang

Research output: Contribution to journalArticle

54 Citations (Scopus)


An analytic three-terminal band-to-band tunneling current model for the gate-induced drain leakage current (GIDL) in an n-MOSFET is developed. This model considers impurity doping concentration, vertical field, lateral field, and so-induced electron momentum enhancement, as well as the surface electrostatic potential in the gate-to-drain overlapped region. Based on a constant surface-potential approximation, a closed-form equation has been obtained instead of the complex integral-form in previous works. The results from this new model show good agreement with the measurement data over a wide range of gate and drain biases and device channel lengths. This work is useful for GIDL analysis in transistor design as well as in circuit simulation.

Original languageEnglish
Pages (from-to)1400-1405
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number7
Publication statusPublished - 2001 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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