An analytical compact PCM model accounting for partial crystallization

Yi Bo Liao; Yan Kai Chen; Meng Hsueh Chiang

doi:10.1109/EDSSC.2007.4450202

An analytical compact PCM model accounting for partial crystallization

Yi Bo Liao, Yan Kai Chen, Meng Hsueh Chiang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

21 Citations (Scopus)

Abstract

This paper presents a simple yet predictive compact model for phase change memory (PCM). We successfully implement the model in a circuit simulator using Verilog-A. Due to the physical nature of the model, it can be used to predict the temperature and crystalline fraction in the cell, simply via SPICE simulation. This paper also demonstrates the use of the model in static resistance calculation, i.e. the Set and Reset statuses in R-I characteristics. More importantly, the crystal status transitions such as partial crystalline and amorphous statuses, resulting in uncertain resistance, are accounted for. The model can facilitate the PCM technology development not only in the device level, but also in the circuit level.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	625-628
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450202
Publication status	Published - 2007 Dec 1
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 2007 Dec 20 → 2007 Dec 22

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan
City	Tainan
Period	07-12-20 → 07-12-22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2007.4450202

Cite this

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title = "An analytical compact PCM model accounting for partial crystallization",

abstract = "This paper presents a simple yet predictive compact model for phase change memory (PCM). We successfully implement the model in a circuit simulator using Verilog-A. Due to the physical nature of the model, it can be used to predict the temperature and crystalline fraction in the cell, simply via SPICE simulation. This paper also demonstrates the use of the model in static resistance calculation, i.e. the Set and Reset statuses in R-I characteristics. More importantly, the crystal status transitions such as partial crystalline and amorphous statuses, resulting in uncertain resistance, are accounted for. The model can facilitate the PCM technology development not only in the device level, but also in the circuit level.",

author = "Liao, {Yi Bo} and Chen, {Yan Kai} and Chiang, {Meng Hsueh}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/EDSSC.2007.4450202",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "625--628",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Liao, YB, Chen, YK & Chiang, MH 2007, An analytical compact PCM model accounting for partial crystallization. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450202, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 625-628, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450202

An analytical compact PCM model accounting for partial crystallization. / Liao, Yi Bo; Chen, Yan Kai; Chiang, Meng Hsueh.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 625-628 4450202 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - An analytical compact PCM model accounting for partial crystallization

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N2 - This paper presents a simple yet predictive compact model for phase change memory (PCM). We successfully implement the model in a circuit simulator using Verilog-A. Due to the physical nature of the model, it can be used to predict the temperature and crystalline fraction in the cell, simply via SPICE simulation. This paper also demonstrates the use of the model in static resistance calculation, i.e. the Set and Reset statuses in R-I characteristics. More importantly, the crystal status transitions such as partial crystalline and amorphous statuses, resulting in uncertain resistance, are accounted for. The model can facilitate the PCM technology development not only in the device level, but also in the circuit level.

AB - This paper presents a simple yet predictive compact model for phase change memory (PCM). We successfully implement the model in a circuit simulator using Verilog-A. Due to the physical nature of the model, it can be used to predict the temperature and crystalline fraction in the cell, simply via SPICE simulation. This paper also demonstrates the use of the model in static resistance calculation, i.e. the Set and Reset statuses in R-I characteristics. More importantly, the crystal status transitions such as partial crystalline and amorphous statuses, resulting in uncertain resistance, are accounted for. The model can facilitate the PCM technology development not only in the device level, but also in the circuit level.

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BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

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ER -

An analytical compact PCM model accounting for partial crystallization

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