An Analytical Gate-All-Around MOSFET Model for Circuit Simulation

Kuan Chou Lin, Wei Wen Ding, Meng-Hsueh Chiang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A generic charge-based compact model for undoped (lightly doped) quadruple-gate (QG) and cylindrical-gate MOSFETs using Verilog-A is developed. This model is based on the exact solution of Poisson's equation with scale length. The fundamental DC and charging currents of QG MOSFETs are physically and analytically calculated. In addition, as the Verilog-A modeling is portable for different circuit simulators, the modeling scheme provides a useful tool for circuit designers.

Original languageEnglish
Article number320320
JournalAdvances in Materials Science and Engineering
Volume2015
DOIs
Publication statusPublished - 2015 Jan 1

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Computer hardware description languages
Circuit simulation
Networks (circuits)
Poisson equation
Simulators

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

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An Analytical Gate-All-Around MOSFET Model for Circuit Simulation. / Lin, Kuan Chou; Ding, Wei Wen; Chiang, Meng-Hsueh.

In: Advances in Materials Science and Engineering, Vol. 2015, 320320, 01.01.2015.

Research output: Contribution to journalArticle

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