An analytical model and measurement on the InAlAs/InGaAs high-electron-mobility transistor with oxidized InAlAs gate

Jung Sheng Huang, Kuan Wei Lee, Fang Ming Lee, Yung Sheng Huang, Yeong-Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The analytical model and measurement of InAlAs/InGaAs metal-oxide- semiconductor high-electron-mobility transistor (MOS-HEMT) lattice-matched to InP substrate with a thin InAlAs native oxide layer are compared and achieved a good agreement, which show the validity of the proposed MOS-HEMT model.

Original languageEnglish
Title of host publicationIPRM'07
Subtitle of host publicationIEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
Pages114-117
Number of pages4
DOIs
Publication statusPublished - 2007 Oct 2
EventIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan
Duration: 2007 May 142007 May 18

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

OtherIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
CountryJapan
CityMatsue
Period07-05-1407-05-18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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