TY - GEN
T1 - An analytical model and measurement on the InAlAs/InGaAs high-electron-mobility transistor with oxidized InAlAs gate
AU - Huang, Jung Sheng
AU - Lee, Kuan Wei
AU - Lee, Fang Ming
AU - Huang, Yung Sheng
AU - Wang, Yeong Her
PY - 2007
Y1 - 2007
N2 - The analytical model and measurement of InAlAs/InGaAs metal-oxide- semiconductor high-electron-mobility transistor (MOS-HEMT) lattice-matched to InP substrate with a thin InAlAs native oxide layer are compared and achieved a good agreement, which show the validity of the proposed MOS-HEMT model.
AB - The analytical model and measurement of InAlAs/InGaAs metal-oxide- semiconductor high-electron-mobility transistor (MOS-HEMT) lattice-matched to InP substrate with a thin InAlAs native oxide layer are compared and achieved a good agreement, which show the validity of the proposed MOS-HEMT model.
UR - http://www.scopus.com/inward/record.url?scp=34748857431&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34748857431&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2007.381136
DO - 10.1109/ICIPRM.2007.381136
M3 - Conference contribution
AN - SCOPUS:34748857431
SN - 142440875X
SN - 9781424408757
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 114
EP - 117
BT - IPRM'07
T2 - IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
Y2 - 14 May 2007 through 18 May 2007
ER -