@inproceedings{b054079b78fe496487d4d0ae212e01a5,
title = "An analytical model and measurement on the InAlAs/InGaAs high-electron-mobility transistor with oxidized InAlAs gate",
abstract = "The analytical model and measurement of InAlAs/InGaAs metal-oxide- semiconductor high-electron-mobility transistor (MOS-HEMT) lattice-matched to InP substrate with a thin InAlAs native oxide layer are compared and achieved a good agreement, which show the validity of the proposed MOS-HEMT model.",
author = "Huang, \{Jung Sheng\} and Lee, \{Kuan Wei\} and Lee, \{Fang Ming\} and Huang, \{Yung Sheng\} and Wang, \{Yeong Her\}",
year = "2007",
doi = "10.1109/ICIPRM.2007.381136",
language = "English",
isbn = "142440875X",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "114--117",
booktitle = "IPRM'07",
note = "IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2007 Through 18-05-2007",
}