An analytical model for the heterostructure-emitter bipolar transistors

Shui-Jinn Wang, B. Y. Yang, Y. C. Luo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Heterojunction bipolar transistors (KBTs) have been the subject of much attention for high gain and high speed operation, and high fan-out capabifity. However, from the device operation point of view, an undesirable characteristic of HBTs in switching application has been the presence of large collector-emitter (c-e) offset voltage. The higher offset voltage increases the c-e saturation voltage, which results in unnecessary consumption in circuit applications. The higher tum-on voltage of the e-b heterojunction is attributed to the conduction band spike at the heterojunction interface. Different schemes for obtaining a graded bandgap base or a compositional grading in the emitter have been proposed to suppress the conduction band spike appearing at the e-b heterojunction. Unfortunately, recent work has suggested that grading techniques may not be completely effective in eliminating barriers to electron conduction at high current densityfq. Moreover, from the point view of manufacturability, the fkbrication of graded bandgap base or compositional grading e-b heterojunction HBTs is far more complicated than that for conventional BJTs.

Original languageEnglish
Title of host publicationSMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages107-108
Number of pages2
ISBN (Electronic)0780312252, 9780780312258
DOIs
Publication statusPublished - 1993 Jan 1
Event1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 - Taipei, Taiwan
Duration: 1993 Mar 61993 Mar 7

Publication series

NameSMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation

Conference

Conference1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993
CountryTaiwan
CityTaipei
Period93-03-0693-03-07

Fingerprint

Heterojunction
Heterostructures
Bipolar transistors
Analytical Model
Heterojunctions
Analytical models
Heterojunction bipolar transistors
Grading
Voltage
Conduction
Electric potential
Conduction bands
Energy gap
Spike
Fans
Saturation
High Speed
Electrons
Networks (circuits)
Electron

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Modelling and Simulation

Cite this

Wang, S-J., Yang, B. Y., & Luo, Y. C. (1993). An analytical model for the heterostructure-emitter bipolar transistors. In SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation (pp. 107-108). [664579] (SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMS.1993.664579
Wang, Shui-Jinn ; Yang, B. Y. ; Luo, Y. C. / An analytical model for the heterostructure-emitter bipolar transistors. SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation. Institute of Electrical and Electronics Engineers Inc., 1993. pp. 107-108 (SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation).
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Wang, S-J, Yang, BY & Luo, YC 1993, An analytical model for the heterostructure-emitter bipolar transistors. in SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation., 664579, SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation, Institute of Electrical and Electronics Engineers Inc., pp. 107-108, 1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993, Taipei, Taiwan, 93-03-06. https://doi.org/10.1109/SMS.1993.664579

An analytical model for the heterostructure-emitter bipolar transistors. / Wang, Shui-Jinn; Yang, B. Y.; Luo, Y. C.

SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation. Institute of Electrical and Electronics Engineers Inc., 1993. p. 107-108 664579 (SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Wang S-J, Yang BY, Luo YC. An analytical model for the heterostructure-emitter bipolar transistors. In SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation. Institute of Electrical and Electronics Engineers Inc. 1993. p. 107-108. 664579. (SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation). https://doi.org/10.1109/SMS.1993.664579