An analytical subthreshold current model for GaAs Mesfet's

T. K. Chiang; Y. H. Wang; M. P. Houng

An analytical subthreshold current model for GaAs Mesfet's

T. K. Chiang, Y. H. Wang, M. P. Houng

Research output: Contribution to journal › Article › peer-review

Abstract

An analytical GaAs MESFET model capable of describing the current in the subthreshold region was derived. The model is based on the drift-diffusion transport mechanism, together with the drain-induced barrier lowering (DIBL) effect, which is prevailing particularly in a short channel device. From this model the subthreshold currents for long channel as well as short channel and the subthreshold swings in two cases are developed. Good agreement between the calculated and experimental results can also be achieved. This model offers a basis for analysis and simulation of small-geometry GaAs MESFET behavior in the subthreshold region.

Original language	English
Pages (from-to)	1767-1773
Number of pages	7
Journal	Solid-State Electronics
Volume	42
Issue number	10
Publication status	Published - 1998 Oct 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Cite this

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abstract = "An analytical GaAs MESFET model capable of describing the current in the subthreshold region was derived. The model is based on the drift-diffusion transport mechanism, together with the drain-induced barrier lowering (DIBL) effect, which is prevailing particularly in a short channel device. From this model the subthreshold currents for long channel as well as short channel and the subthreshold swings in two cases are developed. Good agreement between the calculated and experimental results can also be achieved. This model offers a basis for analysis and simulation of small-geometry GaAs MESFET behavior in the subthreshold region.",

author = "Chiang, {T. K.} and Wang, {Y. H.} and Houng, {M. P.}",

note = "Funding Information: Acknowledgements*This work was supported in part by the National Science Council under the contract NSC74!1104! E995!909[",

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AU - Chiang, T. K.

AU - Wang, Y. H.

AU - Houng, M. P.

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PY - 1998/10/1

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N2 - An analytical GaAs MESFET model capable of describing the current in the subthreshold region was derived. The model is based on the drift-diffusion transport mechanism, together with the drain-induced barrier lowering (DIBL) effect, which is prevailing particularly in a short channel device. From this model the subthreshold currents for long channel as well as short channel and the subthreshold swings in two cases are developed. Good agreement between the calculated and experimental results can also be achieved. This model offers a basis for analysis and simulation of small-geometry GaAs MESFET behavior in the subthreshold region.

AB - An analytical GaAs MESFET model capable of describing the current in the subthreshold region was derived. The model is based on the drift-diffusion transport mechanism, together with the drain-induced barrier lowering (DIBL) effect, which is prevailing particularly in a short channel device. From this model the subthreshold currents for long channel as well as short channel and the subthreshold swings in two cases are developed. Good agreement between the calculated and experimental results can also be achieved. This model offers a basis for analysis and simulation of small-geometry GaAs MESFET behavior in the subthreshold region.

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An analytical subthreshold current model for GaAs Mesfet's

Abstract

All Science Journal Classification (ASJC) codes

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