An effective compliant substrate for low-dislocation relaxed Si1-xGex growth

Y. H. Luo, J. L. Liu, G. Jin, J. Wan, K. L. Wang

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6 Citations (Scopus)


An effective compliant substrate for Si1-xGex growth is presented. A silicon-on-insulator substrate was implanted with B and O forming 20 wt % borosilicate glass within the SiO2. The addition of the borosilicate glass to the buried oxide acted to reduce the viscosity at the growth temperature of Si1-xGex, promoting the in sim elastic deformation of the thin Si (∼ 20 nm) layer on the insulator. The sharing of the misfit between the Si and the Si1-xGex layers was observed and quantified by double-axis X-ray diffraction. In addition, the material quality was assessed using cross-sectional transmission electron microscopy, photoluminescence and etch pit density measurements. No misfit dislocations were observed in the partially relaxed 150-nm Si0.75Ge0.25 sample as-grown on a 20% borosilicate glass substrate. The threading dislocation density was estimated at 2 × 104 cm-2 for 500-nm Si0.75Ge0.25 grown on the 20% borosilicate glass substrate. This method may be used to prepare compliant substrates for the growth of low-dislocation relaxed SiGe layers.

Original languageEnglish
Pages (from-to)699-702
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Issue number5
Publication statusPublished - 2002 May

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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