An effective device design for thermal management of multifinger InGaP/GaAs collector-up HBTs

H. C. Tseng, J. Y. Chen, Jung-Hua Chou

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

An effective device structure for thermal management of multifinger InGaP/GaAs collector-up heterojunction bipolar transistors (HBTs), compelling active components in high-efficiency handset power amplifiers, is presented for the first time. From the unique 3-D thickness-adjusting numerical analysis, based on a finite element model, the miniaturized device can lead to a greater than 40% reduction in the thickness of plated gold layer. Above all, this is quite different from previous attempts, in which the thermal resistance was reduced by increasing the thickness of plated gold layer. Compared with literature works, the thermally stable design with an innovative heat-spread configuration shows a 50% reduction in thermal resistance and demonstrates favorable power performance.

Original languageEnglish
Pages (from-to)443-447
Number of pages5
JournalInternational Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume26
Issue number5
DOIs
Publication statusPublished - 2013 Sep 1

All Science Journal Classification (ASJC) codes

  • Modelling and Simulation
  • Computer Science Applications
  • Electrical and Electronic Engineering

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