An effective method to improve the sensitivity of deep submicrometer CMOS image sensors

T. H. Hsu; Y. K. Fang; D. N. Yaung; J. S. Lin; S. G. Wuu; H. C. Chien; C. H. Tseng; C. S. Wang; S. F. Chen; Yu-Cheng Lin; C. S. Lin; T. H. Chou

doi:10.1109/LED.2005.852536

An effective method to improve the sensitivity of deep submicrometer CMOS image sensors

T. H. Hsu, Y. K. Fang, D. N. Yaung, J. S. Lin, S. G. Wuu, H. C. Chien, C. H. Tseng, C. S. Wang, S. F. Chen, Yu-Cheng Lin, C. S. Lin, T. H. Chou

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

An effective method has been successfully developed to improve the sensitivity of deep sub-micrometer CMOS image sensors (CIS). In advanced CIS technology, the shallow trench isolation (STI) SiO₂ on the photodiode and the SiON film are used for silicide blocking and as a contact etching-stop layer, respectively. However, the dielectric structure, which is composed of an interlayer dielectric/SiON/STI_SiO₂/Si, causes a destructive inter-ference and thus degrades quantum efficiency (QE), especially at short wavelengths. In this paper, an effective method for improving CIS sensitivity has been proposed, based on both theoretical analysis and simulation results, by removing the STI from the photodiode area and then forming a deposition of SiON. Experimental results show that a 40% QE improvement can be achieved under the irradiance of light at a wavelength of 450 nm.

Original language	English
Pages (from-to)	547-549
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	8
DOIs	https://doi.org/10.1109/LED.2005.852536
Publication status	Published - 2005 Aug 1
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2005.852536

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title = "An effective method to improve the sensitivity of deep submicrometer CMOS image sensors",

abstract = "An effective method has been successfully developed to improve the sensitivity of deep sub-micrometer CMOS image sensors (CIS). In advanced CIS technology, the shallow trench isolation (STI) SiO2 on the photodiode and the SiON film are used for silicide blocking and as a contact etching-stop layer, respectively. However, the dielectric structure, which is composed of an interlayer dielectric/SiON/STI_SiO2/Si, causes a destructive inter-ference and thus degrades quantum efficiency (QE), especially at short wavelengths. In this paper, an effective method for improving CIS sensitivity has been proposed, based on both theoretical analysis and simulation results, by removing the STI from the photodiode area and then forming a deposition of SiON. Experimental results show that a 40% QE improvement can be achieved under the irradiance of light at a wavelength of 450 nm.",

author = "Hsu, {T. H.} and Fang, {Y. K.} and Yaung, {D. N.} and Lin, {J. S.} and Wuu, {S. G.} and Chien, {H. C.} and Tseng, {C. H.} and Wang, {C. S.} and Chen, {S. F.} and Yu-Cheng Lin and Lin, {C. S.} and Chou, {T. H.}",

year = "2005",

month = aug,

day = "1",

doi = "10.1109/LED.2005.852536",

language = "English",

volume = "26",

pages = "547--549",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - An effective method to improve the sensitivity of deep submicrometer CMOS image sensors

AU - Hsu, T. H.

AU - Fang, Y. K.

AU - Yaung, D. N.

AU - Lin, J. S.

AU - Wuu, S. G.

AU - Chien, H. C.

AU - Tseng, C. H.

AU - Wang, C. S.

AU - Chen, S. F.

AU - Lin, Yu-Cheng

AU - Lin, C. S.

AU - Chou, T. H.

PY - 2005/8/1

Y1 - 2005/8/1

N2 - An effective method has been successfully developed to improve the sensitivity of deep sub-micrometer CMOS image sensors (CIS). In advanced CIS technology, the shallow trench isolation (STI) SiO2 on the photodiode and the SiON film are used for silicide blocking and as a contact etching-stop layer, respectively. However, the dielectric structure, which is composed of an interlayer dielectric/SiON/STI_SiO2/Si, causes a destructive inter-ference and thus degrades quantum efficiency (QE), especially at short wavelengths. In this paper, an effective method for improving CIS sensitivity has been proposed, based on both theoretical analysis and simulation results, by removing the STI from the photodiode area and then forming a deposition of SiON. Experimental results show that a 40% QE improvement can be achieved under the irradiance of light at a wavelength of 450 nm.

AB - An effective method has been successfully developed to improve the sensitivity of deep sub-micrometer CMOS image sensors (CIS). In advanced CIS technology, the shallow trench isolation (STI) SiO2 on the photodiode and the SiON film are used for silicide blocking and as a contact etching-stop layer, respectively. However, the dielectric structure, which is composed of an interlayer dielectric/SiON/STI_SiO2/Si, causes a destructive inter-ference and thus degrades quantum efficiency (QE), especially at short wavelengths. In this paper, an effective method for improving CIS sensitivity has been proposed, based on both theoretical analysis and simulation results, by removing the STI from the photodiode area and then forming a deposition of SiON. Experimental results show that a 40% QE improvement can be achieved under the irradiance of light at a wavelength of 450 nm.

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DO - 10.1109/LED.2005.852536

M3 - Article

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SP - 547

EP - 549

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

An effective method to improve the sensitivity of deep submicrometer CMOS image sensors

Abstract

All Science Journal Classification (ASJC) codes

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