Abstract
An efficient analytical parameter-extraction approach for the emitter inductance in a hybrid-π equivalent circuit of collector-up heterojunction bipolar transistors (HBTs) is developed for the first time. A full set of elements is derived unambiguously from impedance and admittance formulation. The good agreement between measured and simulated S-parameters ensures the accuracy of this method.
Original language | English |
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Pages (from-to) | 1200-1202 |
Number of pages | 3 |
Journal | IEEE Transactions on Electron Devices |
Volume | 51 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2004 Jul 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering