An efficient analytical parameter-extraction approach for the emitter inductance in a hybrid-π equivalent circuit of collector-up heterojunction bipolar transistors (HBTs) is developed for the first time. A full set of elements is derived unambiguously from impedance and admittance formulation. The good agreement between measured and simulated S-parameters ensures the accuracy of this method.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering