An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors

Guan Fu Chen, Hong Chih Chen, Ting Chang Chang, Shin Ping Huang, Hua Mao Chen, Po Yung Liao, Jian Jie Chen, Chuan Wei Kuo, Wei Chih Lai, Ann Kuo Chu, Sung Chun Lin, Cheng Yen Yeh, Chia Sen Chang, Cheng Ming Tsai, Ming Chang Yu, Shengdong Zhang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


This paper clarifies the correct transmission mechanism, misattributed in the previous research, of a hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) device. Complete drain current-gate voltage (ID - VG) transfer characteristics including the forward and backward gate sweeps (gate voltage carried out in the OFF-state → to on-state and the ON-state → to OFF-state) are performed, and the physics models of an energy-band schematic are clearly explained. This paper reveals that the ID - VG curve stretch-out behavior of the subthreshold region is due to the leakage of the Poole-Frenkel region. At the Poole-Frenkel regions, electrons transfer to the drain terminal, and holes remain in the valance band of the a-Si:H bulk. The remaining holes represent the positive voltage and cause the electron barrier height lowering. This causes an increase in subthreshold current of the subthreshold region. Finally, three experiments are performed to prove the correctness of these models, and the a-Si TFTs device improvement methods will be proposed to enhance the stability and performance of product of the a-Si TFTs.

Original languageEnglish
Article number8689093
Pages (from-to)2614-2619
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - 2019 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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