An exercise of ET/UTBB SOI CMOS modeling and simulation with BSIM-IMG

Qiang Chen, Xinghua Zhong, Yanjun Wu, Nengyong Zhu, Wei Huang, Darsen Lu, Chenming Hu, Bich Yen Nguyen, Olivier Faynot

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents an exploratory application of BSIM-IMG (May/2011-release) to ET/UTBB SOI MOSFET modeling and circuit simulations. Compliance with fundamental compact model requirements and physical scalability with respect to technology parameters in BSIM-IMG are analyzed. BSIM-IMG model parameters are extracted on a 20nm technology. Simulation results are presented both for conventional benchmark and ET/UTBB SOI specific circuits.

Original languageEnglish
Title of host publicationIEEE International SOI Conference, SOI 2011
DOIs
Publication statusPublished - 2011 Dec 20
Event2011 IEEE International SOI Conference, SOI 2011 - Tempe, AZ, United States
Duration: 2011 Oct 32011 Oct 6

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Other

Other2011 IEEE International SOI Conference, SOI 2011
CountryUnited States
CityTempe, AZ
Period11-10-0311-10-06

Fingerprint

Circuit simulation
Scalability
Networks (circuits)
Compliance

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chen, Q., Zhong, X., Wu, Y., Zhu, N., Huang, W., Lu, D., ... Faynot, O. (2011). An exercise of ET/UTBB SOI CMOS modeling and simulation with BSIM-IMG. In IEEE International SOI Conference, SOI 2011 [6081683] (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2011.6081683
Chen, Qiang ; Zhong, Xinghua ; Wu, Yanjun ; Zhu, Nengyong ; Huang, Wei ; Lu, Darsen ; Hu, Chenming ; Nguyen, Bich Yen ; Faynot, Olivier. / An exercise of ET/UTBB SOI CMOS modeling and simulation with BSIM-IMG. IEEE International SOI Conference, SOI 2011. 2011. (Proceedings - IEEE International SOI Conference).
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abstract = "This paper presents an exploratory application of BSIM-IMG (May/2011-release) to ET/UTBB SOI MOSFET modeling and circuit simulations. Compliance with fundamental compact model requirements and physical scalability with respect to technology parameters in BSIM-IMG are analyzed. BSIM-IMG model parameters are extracted on a 20nm technology. Simulation results are presented both for conventional benchmark and ET/UTBB SOI specific circuits.",
author = "Qiang Chen and Xinghua Zhong and Yanjun Wu and Nengyong Zhu and Wei Huang and Darsen Lu and Chenming Hu and Nguyen, {Bich Yen} and Olivier Faynot",
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doi = "10.1109/SOI.2011.6081683",
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Chen, Q, Zhong, X, Wu, Y, Zhu, N, Huang, W, Lu, D, Hu, C, Nguyen, BY & Faynot, O 2011, An exercise of ET/UTBB SOI CMOS modeling and simulation with BSIM-IMG. in IEEE International SOI Conference, SOI 2011., 6081683, Proceedings - IEEE International SOI Conference, 2011 IEEE International SOI Conference, SOI 2011, Tempe, AZ, United States, 11-10-03. https://doi.org/10.1109/SOI.2011.6081683

An exercise of ET/UTBB SOI CMOS modeling and simulation with BSIM-IMG. / Chen, Qiang; Zhong, Xinghua; Wu, Yanjun; Zhu, Nengyong; Huang, Wei; Lu, Darsen; Hu, Chenming; Nguyen, Bich Yen; Faynot, Olivier.

IEEE International SOI Conference, SOI 2011. 2011. 6081683 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - This paper presents an exploratory application of BSIM-IMG (May/2011-release) to ET/UTBB SOI MOSFET modeling and circuit simulations. Compliance with fundamental compact model requirements and physical scalability with respect to technology parameters in BSIM-IMG are analyzed. BSIM-IMG model parameters are extracted on a 20nm technology. Simulation results are presented both for conventional benchmark and ET/UTBB SOI specific circuits.

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Chen Q, Zhong X, Wu Y, Zhu N, Huang W, Lu D et al. An exercise of ET/UTBB SOI CMOS modeling and simulation with BSIM-IMG. In IEEE International SOI Conference, SOI 2011. 2011. 6081683. (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2011.6081683