An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor

Jung Hui Tsai, Shiou Ying Cheng, Lih Wen Laih, Wen Chau Liu, Hao Hsiung Lin

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


A new Al0.48In0.52As/Ga0.47In0.53As heterostructure-emitter bipolar transistor (HEBT) with a very low offset voltage of 40 mV has been fabricated by molecular beam epitaxy. From the theoretical analysis and experimental results, it is found that a 500-Å thick emitter used in the studied device can effectively eliminate the potential spike at the N-AlInAs/n-GaInAs heterointerface. However, a degenerate current gain of about 25 is obtained, attributed to the increase of recombination current at the neutral-emitter regime. This is caused by the short hole diffusion length of GaInAs, which reduces the emitter injection efficiency. Due to the small surface recombination velocity, the emitter edge-thinning design is not essential to improve the device performance of our proposed AlInAs/GaInAs HEBT.

Original languageEnglish
Pages (from-to)1297-1307
Number of pages11
JournalSuperlattices and Microstructures
Issue number6
Publication statusPublished - 1998 Jun

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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