An improved GaN-based light-emitting diode with a SiO2 current blocking layer embedded in stair-like AZO transparent structure

Syuan Hao Liou, Jung Hui Tsai, Wen-Chau Liu, Pao Sheng Lin, Yu Chi Chen

Research output: Contribution to journalArticle

Abstract

In this article, in order to enhance the optical characteristics, GaN-based light-emitting diodes (LEDs) with SiO2 current blocking layer and stair-like aluminum-doped zinc oxide (AZO) transparent layers are fabricated and demonstrated. The characteristics of the LEDs with a planner AZO transparent layer, a SiO2 current blocking layer embedded in planner AZO transparent layer and a stair-like AZO transparent structure, and a SiO2 current blocking layer embedded in stair-like AZO transparent structure are comparatively studied. Experimental results exhibit that the current crowding effect can be effectively improved and it shows the best optical characteristics for the use of a SiO2 current blocking layer embedded in the stair-like transparent structure. At current level of 20 mA, it exhibits the improvements by 17.37%, 37.9%, and 26.3% in light output power, external extraction efficiency, and wall-plug efficiency, as compared to the conventional device with a planner transparent layer.

Original languageEnglish
Pages (from-to)R149-R153
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number10
DOIs
Publication statusPublished - 2017 Jan 1

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Zinc Oxide
Stairs
Zinc oxide
Aluminum
Light emitting diodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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title = "An improved GaN-based light-emitting diode with a SiO2 current blocking layer embedded in stair-like AZO transparent structure",
abstract = "In this article, in order to enhance the optical characteristics, GaN-based light-emitting diodes (LEDs) with SiO2 current blocking layer and stair-like aluminum-doped zinc oxide (AZO) transparent layers are fabricated and demonstrated. The characteristics of the LEDs with a planner AZO transparent layer, a SiO2 current blocking layer embedded in planner AZO transparent layer and a stair-like AZO transparent structure, and a SiO2 current blocking layer embedded in stair-like AZO transparent structure are comparatively studied. Experimental results exhibit that the current crowding effect can be effectively improved and it shows the best optical characteristics for the use of a SiO2 current blocking layer embedded in the stair-like transparent structure. At current level of 20 mA, it exhibits the improvements by 17.37{\%}, 37.9{\%}, and 26.3{\%} in light output power, external extraction efficiency, and wall-plug efficiency, as compared to the conventional device with a planner transparent layer.",
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An improved GaN-based light-emitting diode with a SiO2 current blocking layer embedded in stair-like AZO transparent structure. / Liou, Syuan Hao; Tsai, Jung Hui; Liu, Wen-Chau; Lin, Pao Sheng; Chen, Yu Chi.

In: ECS Journal of Solid State Science and Technology, Vol. 6, No. 10, 01.01.2017, p. R149-R153.

Research output: Contribution to journalArticle

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T1 - An improved GaN-based light-emitting diode with a SiO2 current blocking layer embedded in stair-like AZO transparent structure

AU - Liou, Syuan Hao

AU - Tsai, Jung Hui

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AU - Lin, Pao Sheng

AU - Chen, Yu Chi

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AB - In this article, in order to enhance the optical characteristics, GaN-based light-emitting diodes (LEDs) with SiO2 current blocking layer and stair-like aluminum-doped zinc oxide (AZO) transparent layers are fabricated and demonstrated. The characteristics of the LEDs with a planner AZO transparent layer, a SiO2 current blocking layer embedded in planner AZO transparent layer and a stair-like AZO transparent structure, and a SiO2 current blocking layer embedded in stair-like AZO transparent structure are comparatively studied. Experimental results exhibit that the current crowding effect can be effectively improved and it shows the best optical characteristics for the use of a SiO2 current blocking layer embedded in the stair-like transparent structure. At current level of 20 mA, it exhibits the improvements by 17.37%, 37.9%, and 26.3% in light output power, external extraction efficiency, and wall-plug efficiency, as compared to the conventional device with a planner transparent layer.

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