An Improved Heterostructure-Emitter Bipolar Transistor (HEBT)

Wen Chau Liu; Wen Shiung Lour

doi:10.1109/55.116922

An Improved Heterostructure-Emitter Bipolar Transistor (HEBT)

Wen Chau Liu, Wen Shiung Lour

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

An N-A10.5Ga0.5As/n-GaAs heterostructure-emitter bipolar transistor (HEBT), grown by MBE, has been fabricated with improved performance. The A10.5Ga0.5As layer with higher valence-band offset ΔEv offers better confinement of minority carriers (holes). A small offset voltage of about 80 mV and a high common-emitter current gain of 180 were measured for large-area devices. On the other hand, the adequate design of an n-GaAs emitter layer also plays an important role in device performance. The strongly knee-shaped characteristics and reachthrough effect were observed in those devices fabricated with a thin n-GaAs emitter layer.

Original language	English
Pages (from-to)	474-476
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	9
DOIs	https://doi.org/10.1109/55.116922
Publication status	Published - 1991 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.116922

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title = "An Improved Heterostructure-Emitter Bipolar Transistor (HEBT)",

abstract = "An N-A10.5Ga0.5As/n-GaAs heterostructure-emitter bipolar transistor (HEBT), grown by MBE, has been fabricated with improved performance. The A10.5Ga0.5As layer with higher valence-band offset ΔEv offers better confinement of minority carriers (holes). A small offset voltage of about 80 mV and a high common-emitter current gain of 180 were measured for large-area devices. On the other hand, the adequate design of an n-GaAs emitter layer also plays an important role in device performance. The strongly knee-shaped characteristics and reachthrough effect were observed in those devices fabricated with a thin n-GaAs emitter layer.",

author = "Liu, {Wen Chau} and Lour, {Wen Shiung}",

note = "Funding Information: Manuscript received January 4, 1991; revised June 10, 1991. Part of this work was supported by the National Science Council of the Republic of China under Contract NSC80-0404-E006-14. The authors are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, Republic of China. IEEE Log Number 9102405.",

year = "1991",

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AU - Liu, Wen Chau

AU - Lour, Wen Shiung

N1 - Funding Information: Manuscript received January 4, 1991; revised June 10, 1991. Part of this work was supported by the National Science Council of the Republic of China under Contract NSC80-0404-E006-14. The authors are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, Republic of China. IEEE Log Number 9102405.

PY - 1991/9

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N2 - An N-A10.5Ga0.5As/n-GaAs heterostructure-emitter bipolar transistor (HEBT), grown by MBE, has been fabricated with improved performance. The A10.5Ga0.5As layer with higher valence-band offset ΔEv offers better confinement of minority carriers (holes). A small offset voltage of about 80 mV and a high common-emitter current gain of 180 were measured for large-area devices. On the other hand, the adequate design of an n-GaAs emitter layer also plays an important role in device performance. The strongly knee-shaped characteristics and reachthrough effect were observed in those devices fabricated with a thin n-GaAs emitter layer.

AB - An N-A10.5Ga0.5As/n-GaAs heterostructure-emitter bipolar transistor (HEBT), grown by MBE, has been fabricated with improved performance. The A10.5Ga0.5As layer with higher valence-band offset ΔEv offers better confinement of minority carriers (holes). A small offset voltage of about 80 mV and a high common-emitter current gain of 180 were measured for large-area devices. On the other hand, the adequate design of an n-GaAs emitter layer also plays an important role in device performance. The strongly knee-shaped characteristics and reachthrough effect were observed in those devices fabricated with a thin n-GaAs emitter layer.

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An Improved Heterostructure-Emitter Bipolar Transistor (HEBT)

Abstract

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