An Improved Heterostructure-Emitter Bipolar Transistor (HEBT)

Wen-Chau Liu, Wen Shiung Lour

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

An N-A10.5Ga0.5As/n-GaAs heterostructure-emitter bipolar transistor (HEBT), grown by MBE, has been fabricated with improved performance. The A10.5Ga0.5As layer with higher valence-band offset ΔEv offers better confinement of minority carriers (holes). A small offset voltage of about 80 mV and a high common-emitter current gain of 180 were measured for large-area devices. On the other hand, the adequate design of an n-GaAs emitter layer also plays an important role in device performance. The strongly knee-shaped characteristics and reachthrough effect were observed in those devices fabricated with a thin n-GaAs emitter layer.

Original languageEnglish
Pages (from-to)474-476
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number9
DOIs
Publication statusPublished - 1991 Jan 1

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Bipolar transistors
Valence bands
Molecular beam epitaxy
Heterojunctions
Electric potential
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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An Improved Heterostructure-Emitter Bipolar Transistor (HEBT). / Liu, Wen-Chau; Lour, Wen Shiung.

In: IEEE Electron Device Letters, Vol. 12, No. 9, 01.01.1991, p. 474-476.

Research output: Contribution to journalArticle

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