An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled δ-doping InP channel

Y. J. Chen; Y. W. Chen; Y. S. Lin; C. Y. Yeh; Y. J. Li; W. C. Hsu

doi:10.1143/jjap.40.l7

An improved In_0.34Al_0.66As_0.85Sb_0.15/InP heterostructure utilizing coupled δ-doping InP channel

Y. J. Chen, Y. W. Chen, Y. S. Lin, C. Y. Yeh, Y. J. Li, W. C. Hsu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A coupled δ-doped In_0.34Al_0.66As_0.85Sb_0.15/InP heterostructure field-effect transistor (HFET) has been successfully grown by metalorganic chemical vapor deposition. Electron mobilities can be enhanced without sacrificing the carrier densities. An extremely low gate reverse leakage current of 111 μA/mm at V_gs = -40 V is achieved. The three-terminal on- and off-state breakdown voltages are as high as 40.8 V and 16.1 V, respectively. These characteristics are attributed to the use of the coupled δ-doped structure, InP channel, In_0.34Al_0.66As_0.85Sb_0.15 Schottky layer, and to the large conduction-band discontinuity (ΔE_C) at the InAlAsSb/InP heterojunction. In addition, on- and off-state breakdown mechanisms in the InAlAsSb/InP HFET are also studied.

Original language	English
Pages (from-to)	L7-L9
Journal	Japanese Journal of Applied Physics
Volume	40
Issue number	1 A/B
DOIs	https://doi.org/10.1143/jjap.40.l7
Publication status	Published - 2001 Jan 15

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.40.l7

Cite this

@article{a0273a7b11c64daa9494af14f0ed8476,

title = "An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled δ-doping InP channel",

abstract = "A coupled δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) has been successfully grown by metalorganic chemical vapor deposition. Electron mobilities can be enhanced without sacrificing the carrier densities. An extremely low gate reverse leakage current of 111 μA/mm at Vgs = -40 V is achieved. The three-terminal on- and off-state breakdown voltages are as high as 40.8 V and 16.1 V, respectively. These characteristics are attributed to the use of the coupled δ-doped structure, InP channel, In0.34Al0.66As0.85Sb0.15 Schottky layer, and to the large conduction-band discontinuity (ΔEC) at the InAlAsSb/InP heterojunction. In addition, on- and off-state breakdown mechanisms in the InAlAsSb/InP HFET are also studied.",

author = "Chen, {Y. J.} and Chen, {Y. W.} and Lin, {Y. S.} and Yeh, {C. Y.} and Li, {Y. J.} and Hsu, {W. C.}",

year = "2001",

month = jan,

day = "15",

doi = "10.1143/jjap.40.l7",

language = "English",

volume = "40",

pages = "L7--L9",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "1 A/B",

}

TY - JOUR

T1 - An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled δ-doping InP channel

AU - Chen, Y. J.

AU - Chen, Y. W.

AU - Lin, Y. S.

AU - Yeh, C. Y.

AU - Li, Y. J.

AU - Hsu, W. C.

PY - 2001/1/15

Y1 - 2001/1/15

N2 - A coupled δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) has been successfully grown by metalorganic chemical vapor deposition. Electron mobilities can be enhanced without sacrificing the carrier densities. An extremely low gate reverse leakage current of 111 μA/mm at Vgs = -40 V is achieved. The three-terminal on- and off-state breakdown voltages are as high as 40.8 V and 16.1 V, respectively. These characteristics are attributed to the use of the coupled δ-doped structure, InP channel, In0.34Al0.66As0.85Sb0.15 Schottky layer, and to the large conduction-band discontinuity (ΔEC) at the InAlAsSb/InP heterojunction. In addition, on- and off-state breakdown mechanisms in the InAlAsSb/InP HFET are also studied.

AB - A coupled δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) has been successfully grown by metalorganic chemical vapor deposition. Electron mobilities can be enhanced without sacrificing the carrier densities. An extremely low gate reverse leakage current of 111 μA/mm at Vgs = -40 V is achieved. The three-terminal on- and off-state breakdown voltages are as high as 40.8 V and 16.1 V, respectively. These characteristics are attributed to the use of the coupled δ-doped structure, InP channel, In0.34Al0.66As0.85Sb0.15 Schottky layer, and to the large conduction-band discontinuity (ΔEC) at the InAlAsSb/InP heterojunction. In addition, on- and off-state breakdown mechanisms in the InAlAsSb/InP HFET are also studied.

UR - http://www.scopus.com/inward/record.url?scp=0035862507&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035862507&partnerID=8YFLogxK

U2 - 10.1143/jjap.40.l7

DO - 10.1143/jjap.40.l7

M3 - Article

AN - SCOPUS:0035862507

SN - 0021-4922

VL - 40

SP - L7-L9

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1 A/B

ER -

An improved In_0.34Al_0.66As_0.85Sb_0.15/InP heterostructure utilizing coupled δ-doping InP channel

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this