An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled δ-doping InP channel

Y. J. Chen, Y. W. Chen, Y. S. Lin, C. Y. Yeh, Y. J. Li, Wei-Chou Hsu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A coupled δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) has been successfully grown by metalorganic chemical vapor deposition. Electron mobilities can be enhanced without sacrificing the carrier densities. An extremely low gate reverse leakage current of 111 μA/mm at Vgs = -40 V is achieved. The three-terminal on- and off-state breakdown voltages are as high as 40.8 V and 16.1 V, respectively. These characteristics are attributed to the use of the coupled δ-doped structure, InP channel, In0.34Al0.66As0.85Sb0.15 Schottky layer, and to the large conduction-band discontinuity (ΔEC) at the InAlAsSb/InP heterojunction. In addition, on- and off-state breakdown mechanisms in the InAlAsSb/InP HFET are also studied.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number1 A/B
Publication statusPublished - 2001 Jan 15

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High electron mobility transistors
Heterojunctions
field effect transistors
Doping (additives)
Electron mobility
Metallorganic chemical vapor deposition
Conduction bands
Electric breakdown
electron mobility
electrical faults
Leakage currents
metalorganic chemical vapor deposition
Carrier concentration
heterojunctions
discontinuity
conduction bands
leakage
breakdown

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

@article{a0273a7b11c64daa9494af14f0ed8476,
title = "An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled δ-doping InP channel",
abstract = "A coupled δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) has been successfully grown by metalorganic chemical vapor deposition. Electron mobilities can be enhanced without sacrificing the carrier densities. An extremely low gate reverse leakage current of 111 μA/mm at Vgs = -40 V is achieved. The three-terminal on- and off-state breakdown voltages are as high as 40.8 V and 16.1 V, respectively. These characteristics are attributed to the use of the coupled δ-doped structure, InP channel, In0.34Al0.66As0.85Sb0.15 Schottky layer, and to the large conduction-band discontinuity (ΔEC) at the InAlAsSb/InP heterojunction. In addition, on- and off-state breakdown mechanisms in the InAlAsSb/InP HFET are also studied.",
author = "Chen, {Y. J.} and Chen, {Y. W.} and Lin, {Y. S.} and Yeh, {C. Y.} and Li, {Y. J.} and Wei-Chou Hsu",
year = "2001",
month = "1",
day = "15",
language = "English",
volume = "40",
journal = "Japanese Journal of Applied Physics, Part 2: Letters",
issn = "0021-4922",
number = "1 A/B",

}

An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled δ-doping InP channel. / Chen, Y. J.; Chen, Y. W.; Lin, Y. S.; Yeh, C. Y.; Li, Y. J.; Hsu, Wei-Chou.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 1 A/B, 15.01.2001.

Research output: Contribution to journalArticle

TY - JOUR

T1 - An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled δ-doping InP channel

AU - Chen, Y. J.

AU - Chen, Y. W.

AU - Lin, Y. S.

AU - Yeh, C. Y.

AU - Li, Y. J.

AU - Hsu, Wei-Chou

PY - 2001/1/15

Y1 - 2001/1/15

N2 - A coupled δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) has been successfully grown by metalorganic chemical vapor deposition. Electron mobilities can be enhanced without sacrificing the carrier densities. An extremely low gate reverse leakage current of 111 μA/mm at Vgs = -40 V is achieved. The three-terminal on- and off-state breakdown voltages are as high as 40.8 V and 16.1 V, respectively. These characteristics are attributed to the use of the coupled δ-doped structure, InP channel, In0.34Al0.66As0.85Sb0.15 Schottky layer, and to the large conduction-band discontinuity (ΔEC) at the InAlAsSb/InP heterojunction. In addition, on- and off-state breakdown mechanisms in the InAlAsSb/InP HFET are also studied.

AB - A coupled δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) has been successfully grown by metalorganic chemical vapor deposition. Electron mobilities can be enhanced without sacrificing the carrier densities. An extremely low gate reverse leakage current of 111 μA/mm at Vgs = -40 V is achieved. The three-terminal on- and off-state breakdown voltages are as high as 40.8 V and 16.1 V, respectively. These characteristics are attributed to the use of the coupled δ-doped structure, InP channel, In0.34Al0.66As0.85Sb0.15 Schottky layer, and to the large conduction-band discontinuity (ΔEC) at the InAlAsSb/InP heterojunction. In addition, on- and off-state breakdown mechanisms in the InAlAsSb/InP HFET are also studied.

UR - http://www.scopus.com/inward/record.url?scp=0035862507&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035862507&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035862507

VL - 40

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 1 A/B

ER -