An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled δ-doping InP channel

Y. J. Chen, Y. W. Chen, Y. S. Lin, C. Y. Yeh, Y. J. Li, Wei-Chou Hsu

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2 Citations (Scopus)

Abstract

A coupled δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) has been successfully grown by metalorganic chemical vapor deposition. Electron mobilities can be enhanced without sacrificing the carrier densities. An extremely low gate reverse leakage current of 111 μA/mm at Vgs = -40 V is achieved. The three-terminal on- and off-state breakdown voltages are as high as 40.8 V and 16.1 V, respectively. These characteristics are attributed to the use of the coupled δ-doped structure, InP channel, In0.34Al0.66As0.85Sb0.15 Schottky layer, and to the large conduction-band discontinuity (ΔEC) at the InAlAsSb/InP heterojunction. In addition, on- and off-state breakdown mechanisms in the InAlAsSb/InP HFET are also studied.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number1 A/B
Publication statusPublished - 2001 Jan 15

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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