An improved symmetrically-graded doped-channel heterostructure field-effect transistor

Ke Hua Su, Wei Chou Hsu, Po Jung Hu, Yeong Jia Chen, Ching Sung Lee, Yu Shyan Lin, Chang Luen Wu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


A new heterostructure field-effect transistor with an InGaAs symmetrically-graded doped-channel (SGDC) structure has been successfully investigated. The channel design demonstrated a reduced Coulomb scattering phenomenon by confining the conduction electrons away from the channel/spacer interface. Consequently, a higher current density, a higher breakdown voltage, a wider gate-voltage swing, a higher transconductance, a higher threshold voltage, and improved microwave and power characteristics were achieved by using the SGDC structure, as compared to those of conventional doped-channel devices. Besides, the AlGaAs/GaAs superlattice buffer structure was used to improve the high-temperature threshold-voltage characteristics.

Original languageEnglish
Pages (from-to)1878-1882
Number of pages5
JournalJournal of the Korean Physical Society
Issue number6
Publication statusPublished - 2007 Jun

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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