An improved symmetrically-graded doped-channel heterostructure field-effect transistor

Ke Hua Su, Wei-Chou Hsu, Po Jung Hu, Yeong Jia Chen, Ching Sung Lee, Yu Shyan Lin, Chang Luen Wu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A new heterostructure field-effect transistor with an InGaAs symmetrically-graded doped-channel (SGDC) structure has been successfully investigated. The channel design demonstrated a reduced Coulomb scattering phenomenon by confining the conduction electrons away from the channel/spacer interface. Consequently, a higher current density, a higher breakdown voltage, a wider gate-voltage swing, a higher transconductance, a higher threshold voltage, and improved microwave and power characteristics were achieved by using the SGDC structure, as compared to those of conventional doped-channel devices. Besides, the AlGaAs/GaAs superlattice buffer structure was used to improve the high-temperature threshold-voltage characteristics.

Original languageEnglish
Pages (from-to)1878-1882
Number of pages5
JournalJournal of the Korean Physical Society
Volume50
Issue number6
DOIs
Publication statusPublished - 2007 Jan 1

Fingerprint

field effect transistors
threshold voltage
transconductance
electrical faults
confining
conduction electrons
spacers
aluminum gallium arsenides
high current
high voltages
buffers
current density
microwaves
electric potential
scattering

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Su, Ke Hua ; Hsu, Wei-Chou ; Hu, Po Jung ; Chen, Yeong Jia ; Lee, Ching Sung ; Lin, Yu Shyan ; Wu, Chang Luen. / An improved symmetrically-graded doped-channel heterostructure field-effect transistor. In: Journal of the Korean Physical Society. 2007 ; Vol. 50, No. 6. pp. 1878-1882.
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An improved symmetrically-graded doped-channel heterostructure field-effect transistor. / Su, Ke Hua; Hsu, Wei-Chou; Hu, Po Jung; Chen, Yeong Jia; Lee, Ching Sung; Lin, Yu Shyan; Wu, Chang Luen.

In: Journal of the Korean Physical Society, Vol. 50, No. 6, 01.01.2007, p. 1878-1882.

Research output: Contribution to journalArticle

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AU - Lin, Yu Shyan

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AB - A new heterostructure field-effect transistor with an InGaAs symmetrically-graded doped-channel (SGDC) structure has been successfully investigated. The channel design demonstrated a reduced Coulomb scattering phenomenon by confining the conduction electrons away from the channel/spacer interface. Consequently, a higher current density, a higher breakdown voltage, a wider gate-voltage swing, a higher transconductance, a higher threshold voltage, and improved microwave and power characteristics were achieved by using the SGDC structure, as compared to those of conventional doped-channel devices. Besides, the AlGaAs/GaAs superlattice buffer structure was used to improve the high-temperature threshold-voltage characteristics.

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