An InGaP/GaAs Resonant-Tunnelling Bipolar Transistor (RTBT) with Multiple Negative-Differential-Resistance (MNDR) phenomena

H. M. Chuang, K. W. Lin, H. J. Pan, K. M. Lee, X. D. Liao, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An InGaP/GaAs resonant tunnelling bipolar transistor (RTBT) with superlattice (SL) in the emitters is fabricated and studied. The modulated widths of SL barriers are utilized in the specific SL structure. Based on the calculations, the ground state and first excited state minibands are estimated from the transmission probability. The electron transport of RT through SL structure is significantly determined by the electric field behaviors across SL barriers. Experimentally, the excellent transistor characteristics including the small saturation voltage, small offset voltage, high breakdown voltages are obtained due to the insertion of δ-doping sheet at the base-collector heterointerface. Furthermore, at higher current regimes, the quaternary negative difference resistance (NDR) phenomena are observed in agreement with the theoretical prediction at 300K.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsElena Gnani, Giorgio Baccarani, Massimo Rudan
PublisherIEEE Computer Society
Pages219-222
Number of pages4
ISBN (Electronic)8890084782
DOIs
Publication statusPublished - 2002 Jan 1
Event32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy
Duration: 2002 Sep 242002 Sep 26

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other32nd European Solid-State Device Research Conference, ESSDERC 2002
CountryItaly
CityFirenze
Period02-09-2402-09-26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Chuang, H. M., Lin, K. W., Pan, H. J., Lee, K. M., Liao, X. D., & Liu, W-C. (2002). An InGaP/GaAs Resonant-Tunnelling Bipolar Transistor (RTBT) with Multiple Negative-Differential-Resistance (MNDR) phenomena. In E. Gnani, G. Baccarani, & M. Rudan (Eds.), European Solid-State Device Research Conference (pp. 219-222). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2002.194909