An InGaP/InGaAs/GaAs double channel pseudomorphic high election mobility transistor (DC-PHEMT)

H. M. Chuang, K. W. Lin, C. Y. Chen, J. Y. Chen, C. I. Kao, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0V. Therefore, the studied device provides the promise for microwave circuit applications.

Original languageEnglish
Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
EditorsMichael Gal
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages319-322
Number of pages4
ISBN (Electronic)0780375718
DOIs
Publication statusPublished - 2002 Jan 1
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
Duration: 2002 Dec 112002 Dec 13

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume2002-January

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
CountryAustralia
CitySydney
Period02-12-1102-12-13

Fingerprint

Transconductance
Transistors
Microwave circuits
High electron mobility transistors
Frequency response
Microwaves
Electric potential
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chuang, H. M., Lin, K. W., Chen, C. Y., Chen, J. Y., Kao, C. I., & Liu, W-C. (2002). An InGaP/InGaAs/GaAs double channel pseudomorphic high election mobility transistor (DC-PHEMT). In M. Gal (Ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (pp. 319-322). [1237255] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2002.1237255
Chuang, H. M. ; Lin, K. W. ; Chen, C. Y. ; Chen, J. Y. ; Kao, C. I. ; Liu, Wen-Chau. / An InGaP/InGaAs/GaAs double channel pseudomorphic high election mobility transistor (DC-PHEMT). 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. editor / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 319-322 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).
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abstract = "The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0V. Therefore, the studied device provides the promise for microwave circuit applications.",
author = "Chuang, {H. M.} and Lin, {K. W.} and Chen, {C. Y.} and Chen, {J. Y.} and Kao, {C. I.} and Wen-Chau Liu",
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Chuang, HM, Lin, KW, Chen, CY, Chen, JY, Kao, CI & Liu, W-C 2002, An InGaP/InGaAs/GaAs double channel pseudomorphic high election mobility transistor (DC-PHEMT). in M Gal (ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings., 1237255, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 319-322, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 02-12-11. https://doi.org/10.1109/COMMAD.2002.1237255

An InGaP/InGaAs/GaAs double channel pseudomorphic high election mobility transistor (DC-PHEMT). / Chuang, H. M.; Lin, K. W.; Chen, C. Y.; Chen, J. Y.; Kao, C. I.; Liu, Wen-Chau.

2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. ed. / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. p. 319-322 1237255 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0V. Therefore, the studied device provides the promise for microwave circuit applications.

AB - The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0V. Therefore, the studied device provides the promise for microwave circuit applications.

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Chuang HM, Lin KW, Chen CY, Chen JY, Kao CI, Liu W-C. An InGaP/InGaAs/GaAs double channel pseudomorphic high election mobility transistor (DC-PHEMT). In Gal M, editor, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 319-322. 1237255. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2002.1237255