An InGaP/InGaAs/GaAs double channel pseudomorphic high election mobility transistor (DC-PHEMT)

H. M. Chuang, K. W. Lin, C. Y. Chen, J. Y. Chen, C. I. Kao, W. C. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0V. Therefore, the studied device provides the promise for microwave circuit applications.

Original languageEnglish
Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
EditorsMichael Gal
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages319-322
Number of pages4
ISBN (Electronic)0780375718
DOIs
Publication statusPublished - 2002 Jan 1
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
Duration: 2002 Dec 112002 Dec 13

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume2002-January

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
CountryAustralia
CitySydney
Period02-12-1102-12-13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'An InGaP/InGaAs/GaAs double channel pseudomorphic high election mobility transistor (DC-PHEMT)'. Together they form a unique fingerprint.

Cite this