An integrated a-Si:H Gate driver circuit design for large-sized TFT- LCD applications

Chih-Lung Lin, Mao Hsun Cheng, Chia En Wu, Chun Da Tu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) integrated gate driver circuit with 33% ac-driving structure is presented. The proposed circuit diminishes the threshold voltage (VTH) shift by reducing the bias voltage of pull down TFTs and alternatively turning on the pull down TFTs with 33% duty ratio. The measurement result illustrated that the VTH shift of the TFTs in the proposed structure is improved by 49.93% in contrast to the realized 25% ac-driving structure, and the gate driver can stably operate over 240-h driving at high temperature (60 °C).

Original languageEnglish
Pages (from-to)1007-1009
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume44
Issue number1
DOIs
Publication statusPublished - 2013 Jan 1

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Liquid crystal displays
Networks (circuits)
Thin film transistors
Bias voltage
Amorphous silicon
Threshold voltage
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

@article{0c3d063cd80c46a898c2897de54643c3,
title = "An integrated a-Si:H Gate driver circuit design for large-sized TFT- LCD applications",
abstract = "A novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) integrated gate driver circuit with 33{\%} ac-driving structure is presented. The proposed circuit diminishes the threshold voltage (VTH) shift by reducing the bias voltage of pull down TFTs and alternatively turning on the pull down TFTs with 33{\%} duty ratio. The measurement result illustrated that the VTH shift of the TFTs in the proposed structure is improved by 49.93{\%} in contrast to the realized 25{\%} ac-driving structure, and the gate driver can stably operate over 240-h driving at high temperature (60 °C).",
author = "Chih-Lung Lin and Cheng, {Mao Hsun} and Wu, {Chia En} and Tu, {Chun Da}",
year = "2013",
month = "1",
day = "1",
doi = "10.1002/j.2168-0159.2013.tb06392.x",
language = "English",
volume = "44",
pages = "1007--1009",
journal = "Digest of Technical Papers - SID International Symposium",
issn = "0097-966X",
number = "1",

}

An integrated a-Si:H Gate driver circuit design for large-sized TFT- LCD applications. / Lin, Chih-Lung; Cheng, Mao Hsun; Wu, Chia En; Tu, Chun Da.

In: Digest of Technical Papers - SID International Symposium, Vol. 44, No. 1, 01.01.2013, p. 1007-1009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - An integrated a-Si:H Gate driver circuit design for large-sized TFT- LCD applications

AU - Lin, Chih-Lung

AU - Cheng, Mao Hsun

AU - Wu, Chia En

AU - Tu, Chun Da

PY - 2013/1/1

Y1 - 2013/1/1

N2 - A novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) integrated gate driver circuit with 33% ac-driving structure is presented. The proposed circuit diminishes the threshold voltage (VTH) shift by reducing the bias voltage of pull down TFTs and alternatively turning on the pull down TFTs with 33% duty ratio. The measurement result illustrated that the VTH shift of the TFTs in the proposed structure is improved by 49.93% in contrast to the realized 25% ac-driving structure, and the gate driver can stably operate over 240-h driving at high temperature (60 °C).

AB - A novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) integrated gate driver circuit with 33% ac-driving structure is presented. The proposed circuit diminishes the threshold voltage (VTH) shift by reducing the bias voltage of pull down TFTs and alternatively turning on the pull down TFTs with 33% duty ratio. The measurement result illustrated that the VTH shift of the TFTs in the proposed structure is improved by 49.93% in contrast to the realized 25% ac-driving structure, and the gate driver can stably operate over 240-h driving at high temperature (60 °C).

UR - http://www.scopus.com/inward/record.url?scp=84904960493&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904960493&partnerID=8YFLogxK

U2 - 10.1002/j.2168-0159.2013.tb06392.x

DO - 10.1002/j.2168-0159.2013.tb06392.x

M3 - Article

AN - SCOPUS:84904960493

VL - 44

SP - 1007

EP - 1009

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

IS - 1

ER -