An integrated ECC and redundancy repair scheme for memory reliability enhancement

Chin Lung Su, Yi Ting Yeh, Cheng Wen Wu

Research output: Contribution to journalConference article

48 Citations (Scopus)

Abstract

With the fast development pace of deep submicron technology, the size and density of semiconductor memory grows rapidly. However, keeping a high level of yield and reliability for memory products is more and more difficult. Both the redundancy repair and ECC techniques have been widely used for enhancing the yield and reliability of memory chips. Specifically, the redundancy repair and ECC techniques are conventionally used to repair or correct the hard faults and soft errors, respectively. In this paper, we propose an integrated ECC and redundancy repair scheme for memory reliability enhancement. Our approach can identify the hard faults and soft errors during the memory normal operation mode, and repair the hard faults during the memory idle time as long as there are unused redundant elements. We also develop a method for evaluating the memory reliability. Experimental results show that the proposed approach is effective, e.g., the MTTFof an 32K × 64 memory is improved by 1,412 hours (7.1%) with our integrated ECC and repair scheme.

Original languageEnglish
Pages (from-to)81-89
Number of pages9
JournalProceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems
Publication statusPublished - 2005 Dec 12
Event20th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems, DFT 2005 - Monterey, CA, United States
Duration: 2005 Oct 32005 Oct 5

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Redundancy
Repair
Data storage equipment
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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