An investigation of molecular beam epitaxy "in-situ" grown Ag/GaAs schottky diodes

Y. H. Wang; M. P. Houng; F. H. Chen; P. W. Sze; M. Hong; J. P. Mannaerts

doi:10.1007/BF02665548

An investigation of molecular beam epitaxy "in-situ" grown Ag/GaAs schottky diodes

Y. H. Wang, M. P. Houng, F. H. Chen, P. W. Sze, M. Hong, J. P. Mannaerts

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Electrical properties of molecular beam epitaxy "in-situ" grown Ag on (001) GaAs Schottky diodes were investigated. X-ray rocking curves show a (111) main peak for "in-situ" Ag grown at low temperature. During annealing, the main peak of Ag rotates from (111) to (200) to closely match that of the underlying GaAs lattice. The barrier height, 0.991 eV (determined by C-V measurement), decreases whereas doping concentration increases with increasing annealing temperature. Interdiffusion and the formation of some compound phases were also observed during annealing. A simple model, in which Ga dissociates from GaAs resulting in an increase in uncompensated ions at the metal-semiconductor interface, is proposed to explain the observation that carrier concentrations increase after annealing.

Original language	English
Pages (from-to)	911-915
Number of pages	5
Journal	Journal of Electronic Materials
Volume	21
Issue number	9
DOIs	https://doi.org/10.1007/BF02665548
Publication status	Published - 1992 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/BF02665548

Cite this

@article{13c0ffbc02954faeb7fc2cdcbf83cd88,

title = "An investigation of molecular beam epitaxy {"}in-situ{"} grown Ag/GaAs schottky diodes",

abstract = "Electrical properties of molecular beam epitaxy {"}in-situ{"} grown Ag on (001) GaAs Schottky diodes were investigated. X-ray rocking curves show a (111) main peak for {"}in-situ{"} Ag grown at low temperature. During annealing, the main peak of Ag rotates from (111) to (200) to closely match that of the underlying GaAs lattice. The barrier height, 0.991 eV (determined by C-V measurement), decreases whereas doping concentration increases with increasing annealing temperature. Interdiffusion and the formation of some compound phases were also observed during annealing. A simple model, in which Ga dissociates from GaAs resulting in an increase in uncompensated ions at the metal-semiconductor interface, is proposed to explain the observation that carrier concentrations increase after annealing.",

author = "Wang, {Y. H.} and Houng, {M. P.} and Chen, {F. H.} and Sze, {P. W.} and M. Hong and Mannaerts, {J. P.}",

year = "1992",

month = sep,

doi = "10.1007/BF02665548",

language = "English",

volume = "21",

pages = "911--915",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "9",

}

TY - JOUR

T1 - An investigation of molecular beam epitaxy "in-situ" grown Ag/GaAs schottky diodes

AU - Wang, Y. H.

AU - Houng, M. P.

AU - Chen, F. H.

AU - Sze, P. W.

AU - Hong, M.

AU - Mannaerts, J. P.

PY - 1992/9

Y1 - 1992/9

N2 - Electrical properties of molecular beam epitaxy "in-situ" grown Ag on (001) GaAs Schottky diodes were investigated. X-ray rocking curves show a (111) main peak for "in-situ" Ag grown at low temperature. During annealing, the main peak of Ag rotates from (111) to (200) to closely match that of the underlying GaAs lattice. The barrier height, 0.991 eV (determined by C-V measurement), decreases whereas doping concentration increases with increasing annealing temperature. Interdiffusion and the formation of some compound phases were also observed during annealing. A simple model, in which Ga dissociates from GaAs resulting in an increase in uncompensated ions at the metal-semiconductor interface, is proposed to explain the observation that carrier concentrations increase after annealing.

AB - Electrical properties of molecular beam epitaxy "in-situ" grown Ag on (001) GaAs Schottky diodes were investigated. X-ray rocking curves show a (111) main peak for "in-situ" Ag grown at low temperature. During annealing, the main peak of Ag rotates from (111) to (200) to closely match that of the underlying GaAs lattice. The barrier height, 0.991 eV (determined by C-V measurement), decreases whereas doping concentration increases with increasing annealing temperature. Interdiffusion and the formation of some compound phases were also observed during annealing. A simple model, in which Ga dissociates from GaAs resulting in an increase in uncompensated ions at the metal-semiconductor interface, is proposed to explain the observation that carrier concentrations increase after annealing.

UR - http://www.scopus.com/inward/record.url?scp=0026927904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026927904&partnerID=8YFLogxK

U2 - 10.1007/BF02665548

DO - 10.1007/BF02665548

M3 - Article

AN - SCOPUS:0026927904

SN - 0361-5235

VL - 21

SP - 911

EP - 915

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

ER -

An investigation of molecular beam epitaxy "in-situ" grown Ag/GaAs schottky diodes

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this