An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors

Kuen Shiuan Tian; Jone F. Chen; Shiang Yu Chen; Kuo Ming Wu; J. R. Lee; Tsung Yi Huang; C. M. Liu; S. L. Hsu

doi:10.1143/JJAP.47.2641

An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors

Kuen Shiuan Tian, Jone F. Chen, Shiang Yu Chen, Kuo Ming Wu, J. R. Lee, Tsung Yi Huang, C. M. Liu, S. L. Hsu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The hot-carrier-induced degradation in the high-voltage n-type lateral diffused metal-oxide-semiconductor (LDMOS) field-effect transistor is investigated. Interface state generation caused by hot-electron injection in the channel region is identified to be the main degradation mechanism. Since the gate current (I_g) consists mainly of the electron injection, I _g correlates well with the hot-carrier lifetime of the device. The impact of varying device layout parameter on the performance and hot-carrier lifetime of the device are also evaluated. Such an analysis can achieve a better design of LDMOS transistors when considering both device performance and hot-carrier reliability.

Original language	English
Pages (from-to)	2641-2644
Number of pages	4
Journal	Japanese journal of applied physics
Volume	47
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.2641
Publication status	Published - 2008 Apr 25

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.1143/JJAP.47.2641

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title = "An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors",

abstract = "The hot-carrier-induced degradation in the high-voltage n-type lateral diffused metal-oxide-semiconductor (LDMOS) field-effect transistor is investigated. Interface state generation caused by hot-electron injection in the channel region is identified to be the main degradation mechanism. Since the gate current (Ig) consists mainly of the electron injection, I g correlates well with the hot-carrier lifetime of the device. The impact of varying device layout parameter on the performance and hot-carrier lifetime of the device are also evaluated. Such an analysis can achieve a better design of LDMOS transistors when considering both device performance and hot-carrier reliability.",

author = "Tian, {Kuen Shiuan} and Chen, {Jone F.} and Chen, {Shiang Yu} and Wu, {Kuo Ming} and Lee, {J. R.} and Huang, {Tsung Yi} and Liu, {C. M.} and Hsu, {S. L.}",

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T1 - An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors

AU - Tian, Kuen Shiuan

AU - Chen, Jone F.

AU - Chen, Shiang Yu

AU - Wu, Kuo Ming

AU - Lee, J. R.

AU - Huang, Tsung Yi

AU - Liu, C. M.

AU - Hsu, S. L.

PY - 2008/4/25

Y1 - 2008/4/25

N2 - The hot-carrier-induced degradation in the high-voltage n-type lateral diffused metal-oxide-semiconductor (LDMOS) field-effect transistor is investigated. Interface state generation caused by hot-electron injection in the channel region is identified to be the main degradation mechanism. Since the gate current (Ig) consists mainly of the electron injection, I g correlates well with the hot-carrier lifetime of the device. The impact of varying device layout parameter on the performance and hot-carrier lifetime of the device are also evaluated. Such an analysis can achieve a better design of LDMOS transistors when considering both device performance and hot-carrier reliability.

AB - The hot-carrier-induced degradation in the high-voltage n-type lateral diffused metal-oxide-semiconductor (LDMOS) field-effect transistor is investigated. Interface state generation caused by hot-electron injection in the channel region is identified to be the main degradation mechanism. Since the gate current (Ig) consists mainly of the electron injection, I g correlates well with the hot-carrier lifetime of the device. The impact of varying device layout parameter on the performance and hot-carrier lifetime of the device are also evaluated. Such an analysis can achieve a better design of LDMOS transistors when considering both device performance and hot-carrier reliability.

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An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors

Abstract

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