An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors

Kuen Shiuan Tian, Jone-Fang Chen, Shiang Yu Chen, Kuo Ming Wu, J. R. Lee, Tsung Yi Huang, C. M. Liu, S. L. Hsu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The hot-carrier-induced degradation in the high-voltage n-type lateral diffused metal-oxide-semiconductor (LDMOS) field-effect transistor is investigated. Interface state generation caused by hot-electron injection in the channel region is identified to be the main degradation mechanism. Since the gate current (Ig) consists mainly of the electron injection, I g correlates well with the hot-carrier lifetime of the device. The impact of varying device layout parameter on the performance and hot-carrier lifetime of the device are also evaluated. Such an analysis can achieve a better design of LDMOS transistors when considering both device performance and hot-carrier reliability.

Original languageEnglish
Pages (from-to)2641-2644
Number of pages4
JournalJapanese Journal of Applied Physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors'. Together they form a unique fingerprint.

  • Cite this