The hot-carrier-induced degradation in the high-voltage n-type lateral diffused metal-oxide-semiconductor (LDMOS) field-effect transistor is investigated. Interface state generation caused by hot-electron injection in the channel region is identified to be the main degradation mechanism. Since the gate current (Ig) consists mainly of the electron injection, I g correlates well with the hot-carrier lifetime of the device. The impact of varying device layout parameter on the performance and hot-carrier lifetime of the device are also evaluated. Such an analysis can achieve a better design of LDMOS transistors when considering both device performance and hot-carrier reliability.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)