An isolated Al-poly Si-(p)Si-(n+)Si switching device

C. Y. Chang, Y. D. Wang, F. C. Tzeng, C. T. Chen, S. J. Wang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A new MISS switching device structure was designed and fabricated, which consists of Al/poly Si/p/n+/p-Si layers and is isolated by diffusing n-well to the buried n+ layer. The switching voltage increases with increasing junction area of the poly-Si junction and the n+p junction, due to surface recombination current in the emitter-base junction, respectively. The holding voltage is kept nearly constant of 0.9 V for the 886 Å poly Si devices.

Original languageEnglish
Pages (from-to)735-737
Number of pages3
JournalSolid State Electronics
Volume29
Issue number7
DOIs
Publication statusPublished - 1986 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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