A new MISS switching device structure was designed and fabricated, which consists of Al/poly Si/p/n+/p-Si layers and is isolated by diffusing n-well to the buried n+ layer. The switching voltage increases with increasing junction area of the poly-Si junction and the n+p junction, due to surface recombination current in the emitter-base junction, respectively. The holding voltage is kept nearly constant of 0.9 V for the 886 Å poly Si devices.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry