An optoelectronic switch

Der Feng Guo, Wen-Chau Liu, Jung Hui Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A GaAs-InGaAs optoelectronic switch, grown by molecular beam epitaxy (MBE), has been fabricated. Owing to the avalanche multiplication and hole accumulation in the transport mechanism, bistable states, i.e., a high-impedance OFF state and a low-impedance ON state, are observed in the current-voltage (I-V) characteristics. The device shows a flexible optical function related to the potential barrier height controllable by incident light. The dependence of the I-V characteristics on illumination is attributed to the photogenerated hole accumulation in the device operation.

Original languageEnglish
Title of host publication2009 IEEE International Vacuum Electronics Conference, IVEC 2009
Pages395-396
Number of pages2
DOIs
Publication statusPublished - 2009 Nov 20
Event2009 IEEE International Vacuum Electronics Conference, IVEC 2009 - Rome, Italy
Duration: 2009 Apr 282009 Apr 30

Publication series

Name2009 IEEE International Vacuum Electronics Conference, IVEC 2009

Other

Other2009 IEEE International Vacuum Electronics Conference, IVEC 2009
CountryItaly
CityRome
Period09-04-2809-04-30

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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