Abstract
We have demonstrated that the photoalignment method could be used to control the structural anisotropy of pentacene films, an active semiconducting layer, in thin-film transistors (TFTs) with conspicuously anisotropic electrical characteristics. The photoaligned pentacene films were characterized with respect to structure and morphology using X-ray diffraction and atomic force microscopy. Compared to the pentacene films that are not controlled, a maximal 25-times increase in field-effect mobility (up to 0.7.5 cm V -1 s-1) has been achieved in the photoaligned pentacene-based TFTs by aligning pentacene orientation parallel to the direction of current flow with the help of a photoaligned polyimide layer. Mobility anisotropic ratio in the range of 2.7-8.3 for the current flow parallel and perpendicular to the alignment of the photoaligned pentacene films have been observed for photoaligned pentacene-based TFTs.
Original language | English |
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Pages (from-to) | 811-815 |
Number of pages | 5 |
Journal | Advanced Functional Materials |
Volume | 14 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2004 Aug |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- General Chemistry
- General Materials Science