An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique

Sang Yun Lee; Bedri Artug Cetiner; Hamid Torpi; S. J. Cai; Jiang Li; K. Alt; Y. L. Chen; Cheng P. Wen; Kang L. Wang; Tatsuo Itoh

doi:10.1109/16.906442

An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique

Sang Yun Lee, Bedri Artug Cetiner, Hamid Torpi, S. J. Cai, Jiang Li, K. Alt, Y. L. Chen, Cheng P. Wen, Kang L. Wang, Tatsuo Itoh

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

In this paper, the first gallium nitride (GaN) based high electron mobility transistor (HEMT) power amplifier design using an artificial neural network (ANN) modeling technique is presented. The ANN technique was used to model the small signal behavior of a device with a gate periphery of 1 mm and a gate length of 1 μm over the broad frequency range from 1 GHz to 26 GHz with multiple bias points, based on fitting calculated S-parameters to measured S-parameters. A single stage amplifier constructed using these parameters showed a gain of about 7 dB and an output power of 1.2 W at 8 GHz when biased at V_ds = 20 V and I_ds = 220 mA in class AB mode. The good agreement between measured and simulated results was shown in both S-parameter modeling and in amplifier design.

Original language	English
Pages (from-to)	495-501
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	3
DOIs	https://doi.org/10.1109/16.906442
Publication status	Published - 2001 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.906442

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@article{d4bed292972949cd9210c24a3b08351f,

title = "An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique",

abstract = "In this paper, the first gallium nitride (GaN) based high electron mobility transistor (HEMT) power amplifier design using an artificial neural network (ANN) modeling technique is presented. The ANN technique was used to model the small signal behavior of a device with a gate periphery of 1 mm and a gate length of 1 μm over the broad frequency range from 1 GHz to 26 GHz with multiple bias points, based on fitting calculated S-parameters to measured S-parameters. A single stage amplifier constructed using these parameters showed a gain of about 7 dB and an output power of 1.2 W at 8 GHz when biased at Vds = 20 V and Ids = 220 mA in class AB mode. The good agreement between measured and simulated results was shown in both S-parameter modeling and in amplifier design.",

author = "Lee, {Sang Yun} and Cetiner, {Bedri Artug} and Hamid Torpi and Cai, {S. J.} and Jiang Li and K. Alt and Chen, {Y. L.} and Wen, {Cheng P.} and Wang, {Kang L.} and Tatsuo Itoh",

note = "Funding Information: Manuscript received April 15, 2000, 2000; revised November 20, 2000. This work was supported in part by BMDO (managed by Dr. K. Wu and monitored by Dr. G. Chambers). The review of this paper was arranged by Editor U. Mishra. Funding Information: Dr. Cetiner is a recipient of the 1999 NATO scholarship given by the Scientific and Technical Research Council of Turkey (TUBITAK) for post-doctoral research.",

year = "2001",

month = mar,

doi = "10.1109/16.906442",

language = "English",

volume = "48",

pages = "495--501",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique

AU - Lee, Sang Yun

AU - Cetiner, Bedri Artug

AU - Torpi, Hamid

AU - Cai, S. J.

AU - Li, Jiang

AU - Alt, K.

AU - Chen, Y. L.

AU - Wen, Cheng P.

AU - Wang, Kang L.

AU - Itoh, Tatsuo

N1 - Funding Information: Manuscript received April 15, 2000, 2000; revised November 20, 2000. This work was supported in part by BMDO (managed by Dr. K. Wu and monitored by Dr. G. Chambers). The review of this paper was arranged by Editor U. Mishra. Funding Information: Dr. Cetiner is a recipient of the 1999 NATO scholarship given by the Scientific and Technical Research Council of Turkey (TUBITAK) for post-doctoral research.

PY - 2001/3

Y1 - 2001/3

N2 - In this paper, the first gallium nitride (GaN) based high electron mobility transistor (HEMT) power amplifier design using an artificial neural network (ANN) modeling technique is presented. The ANN technique was used to model the small signal behavior of a device with a gate periphery of 1 mm and a gate length of 1 μm over the broad frequency range from 1 GHz to 26 GHz with multiple bias points, based on fitting calculated S-parameters to measured S-parameters. A single stage amplifier constructed using these parameters showed a gain of about 7 dB and an output power of 1.2 W at 8 GHz when biased at Vds = 20 V and Ids = 220 mA in class AB mode. The good agreement between measured and simulated results was shown in both S-parameter modeling and in amplifier design.

AB - In this paper, the first gallium nitride (GaN) based high electron mobility transistor (HEMT) power amplifier design using an artificial neural network (ANN) modeling technique is presented. The ANN technique was used to model the small signal behavior of a device with a gate periphery of 1 mm and a gate length of 1 μm over the broad frequency range from 1 GHz to 26 GHz with multiple bias points, based on fitting calculated S-parameters to measured S-parameters. A single stage amplifier constructed using these parameters showed a gain of about 7 dB and an output power of 1.2 W at 8 GHz when biased at Vds = 20 V and Ids = 220 mA in class AB mode. The good agreement between measured and simulated results was shown in both S-parameter modeling and in amplifier design.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

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An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique

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