An X-band high-power and high-PAE PHEMT MMIC power amplifier for pulse and CW operation

Chen Kuo Chu, Hou Kuei Huang, Hong Zhi Liu, Che Hung Lin, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 Ω input and output impedance. Based on a 0.35 μm gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.

Original languageEnglish
Article number4639566
Pages (from-to)707-709
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume18
Issue number10
DOIs
Publication statusPublished - 2008 Oct

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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