An X-band high-power and high-PAE PHEMT MMIC power amplifier for pulse and CW operation

Chen Kuo Chu; Hou Kuei Huang; Hong Zhi Liu; Che Hung Lin; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang

doi:10.1109/LMWC.2008.2003485

An X-band high-power and high-PAE PHEMT MMIC power amplifier for pulse and CW operation

Chen Kuo Chu, Hou Kuei Huang, Hong Zhi Liu, Che Hung Lin, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 Ω input and output impedance. Based on a 0.35 μm gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.

Original language	English
Article number	4639566
Pages (from-to)	707-709
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	18
Issue number	10
DOIs	https://doi.org/10.1109/LMWC.2008.2003485
Publication status	Published - 2008 Oct

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/LMWC.2008.2003485

Fingerprint Dive into the research topics of 'An X-band high-power and high-PAE PHEMT MMIC power amplifier for pulse and CW operation'. Together they form a unique fingerprint.

Cite this

@article{4c18d14017dc44aa8e5dc4b1fbf61041,

title = "An X-band high-power and high-PAE PHEMT MMIC power amplifier for pulse and CW operation",

abstract = "An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 Ω input and output impedance. Based on a 0.35 μm gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.",

author = "Chu, {Chen Kuo} and Huang, {Hou Kuei} and Liu, {Hong Zhi} and Lin, {Che Hung} and Chang, {Ching Hsueh} and Wu, {Chang Luen} and Chang, {Chian Sern} and Wang, {Yeong Her}",

note = "Funding Information: Manuscript received April 17, 2008; revised May 10, 2008. Current version published October 8, 2008. This work was supported in part by the National Science Council under contract NSC 95-2221-E-006-428-MY3, and in part by the Foundation of Chen, Jieh-Chen Scholarship, Tainan, Taiwan, R.O.C.",

year = "2008",

month = oct,

doi = "10.1109/LMWC.2008.2003485",

language = "English",

volume = "18",

pages = "707--709",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

An X-band high-power and high-PAE PHEMT MMIC power amplifier for pulse and CW operation. / Chu, Chen Kuo; Huang, Hou Kuei; Liu, Hong Zhi; Lin, Che Hung; Chang, Ching Hsueh; Wu, Chang Luen; Chang, Chian Sern; Wang, Yeong Her.

In: IEEE Microwave and Wireless Components Letters, Vol. 18, No. 10, 4639566, 10.2008, p. 707-709.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - An X-band high-power and high-PAE PHEMT MMIC power amplifier for pulse and CW operation

AU - Chu, Chen Kuo

AU - Huang, Hou Kuei

AU - Liu, Hong Zhi

AU - Lin, Che Hung

AU - Chang, Ching Hsueh

AU - Wu, Chang Luen

AU - Chang, Chian Sern

AU - Wang, Yeong Her

N1 - Funding Information: Manuscript received April 17, 2008; revised May 10, 2008. Current version published October 8, 2008. This work was supported in part by the National Science Council under contract NSC 95-2221-E-006-428-MY3, and in part by the Foundation of Chen, Jieh-Chen Scholarship, Tainan, Taiwan, R.O.C.

PY - 2008/10

Y1 - 2008/10

N2 - An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 Ω input and output impedance. Based on a 0.35 μm gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.

AB - An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 Ω input and output impedance. Based on a 0.35 μm gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.

UR - http://www.scopus.com/inward/record.url?scp=54049123049&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54049123049&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2008.2003485

DO - 10.1109/LMWC.2008.2003485

M3 - Article

AN - SCOPUS:54049123049

VL - 18

SP - 707

EP - 709

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 10

M1 - 4639566

ER -

An X-band high-power and high-PAE PHEMT MMIC power amplifier for pulse and CW operation

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this