An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 Ω input and output impedance. Based on a 0.35 μm gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering