Analyses of electrical properties and stability of organic complementary transistors

Wei-Yang Chou, Bo Liang Yeh, Horng-Long Cheng, Shyh Jiun Liu, Bo Yuan Sun, Tzu Hsiu Chou, Yu Hao Chen

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Organic complementary inverters were fabricated by integrating organic p - and n -channel thin film transistors. Bottom-gate and top-contact organic thin film transistors (OTFTs) with polyimide (PI)-modified silicon oxide dielectrics and silver electrodes exhibit similar carrier mobilities, threshold voltages, drain currents, and hysteresis. A gate-bias stress test was performed on both p- and n-type OTFTs. The threshold voltages and hysteresis decreased according to the space charge separation in the PI layer which could be explained by a space charge model. The complementary inverters based on these organic transistors exhibit high noise margins (NMs), a transfer voltage located at VDD /2, and a gain of 40 with supply voltage VDD of +50 V. The electrical stability of the inverters measured during gate-bias stress reveals that the variations in the NMs and transition voltage remained below 5%.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number10
DOIs
Publication statusPublished - 2010 Sep 7

Fingerprint

Thin film transistors
inverters
Transistors
Electric properties
transistors
electrical properties
Threshold voltage
Electric space charge
Polyimides
Hysteresis
Electric potential
polyimides
threshold voltage
Gates (transistor)
space charge
margins
electric potential
thin films
Drain current
Carrier mobility

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Chou, Wei-Yang ; Yeh, Bo Liang ; Cheng, Horng-Long ; Liu, Shyh Jiun ; Sun, Bo Yuan ; Chou, Tzu Hsiu ; Chen, Yu Hao. / Analyses of electrical properties and stability of organic complementary transistors. In: Journal of the Electrochemical Society. 2010 ; Vol. 157, No. 10.
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Analyses of electrical properties and stability of organic complementary transistors. / Chou, Wei-Yang; Yeh, Bo Liang; Cheng, Horng-Long; Liu, Shyh Jiun; Sun, Bo Yuan; Chou, Tzu Hsiu; Chen, Yu Hao.

In: Journal of the Electrochemical Society, Vol. 157, No. 10, 07.09.2010.

Research output: Contribution to journalArticle

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AU - Cheng, Horng-Long

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AU - Chou, Tzu Hsiu

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