Abstract
Organic complementary inverters were fabricated by integrating organic p - and n -channel thin film transistors. Bottom-gate and top-contact organic thin film transistors (OTFTs) with polyimide (PI)-modified silicon oxide dielectrics and silver electrodes exhibit similar carrier mobilities, threshold voltages, drain currents, and hysteresis. A gate-bias stress test was performed on both p- and n-type OTFTs. The threshold voltages and hysteresis decreased according to the space charge separation in the PI layer which could be explained by a space charge model. The complementary inverters based on these organic transistors exhibit high noise margins (NMs), a transfer voltage located at VDD /2, and a gain of 40 with supply voltage VDD of +50 V. The electrical stability of the inverters measured during gate-bias stress reveals that the variations in the NMs and transition voltage remained below 5%.
| Original language | English |
|---|---|
| Journal | Journal of the Electrochemical Society |
| Volume | 157 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2010 Sep 7 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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Analyses of electrical properties and stability of organic complementary transistors. / Chou, Wei-Yang; Yeh, Bo Liang; Cheng, Horng-Long; Liu, Shyh Jiun; Sun, Bo Yuan; Chou, Tzu Hsiu; Chen, Yu Hao.
In: Journal of the Electrochemical Society, Vol. 157, No. 10, 07.09.2010.Research output: Contribution to journal › Article
TY - JOUR
T1 - Analyses of electrical properties and stability of organic complementary transistors
AU - Chou, Wei-Yang
AU - Yeh, Bo Liang
AU - Cheng, Horng-Long
AU - Liu, Shyh Jiun
AU - Sun, Bo Yuan
AU - Chou, Tzu Hsiu
AU - Chen, Yu Hao
PY - 2010/9/7
Y1 - 2010/9/7
N2 - Organic complementary inverters were fabricated by integrating organic p - and n -channel thin film transistors. Bottom-gate and top-contact organic thin film transistors (OTFTs) with polyimide (PI)-modified silicon oxide dielectrics and silver electrodes exhibit similar carrier mobilities, threshold voltages, drain currents, and hysteresis. A gate-bias stress test was performed on both p- and n-type OTFTs. The threshold voltages and hysteresis decreased according to the space charge separation in the PI layer which could be explained by a space charge model. The complementary inverters based on these organic transistors exhibit high noise margins (NMs), a transfer voltage located at VDD /2, and a gain of 40 with supply voltage VDD of +50 V. The electrical stability of the inverters measured during gate-bias stress reveals that the variations in the NMs and transition voltage remained below 5%.
AB - Organic complementary inverters were fabricated by integrating organic p - and n -channel thin film transistors. Bottom-gate and top-contact organic thin film transistors (OTFTs) with polyimide (PI)-modified silicon oxide dielectrics and silver electrodes exhibit similar carrier mobilities, threshold voltages, drain currents, and hysteresis. A gate-bias stress test was performed on both p- and n-type OTFTs. The threshold voltages and hysteresis decreased according to the space charge separation in the PI layer which could be explained by a space charge model. The complementary inverters based on these organic transistors exhibit high noise margins (NMs), a transfer voltage located at VDD /2, and a gain of 40 with supply voltage VDD of +50 V. The electrical stability of the inverters measured during gate-bias stress reveals that the variations in the NMs and transition voltage remained below 5%.
UR - http://www.scopus.com/inward/record.url?scp=77956201922&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77956201922&partnerID=8YFLogxK
U2 - 10.1149/1.3478573
DO - 10.1149/1.3478573
M3 - Article
AN - SCOPUS:77956201922
VL - 157
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 10
ER -