Analyses of electrical properties and stability of organic complementary transistors

Wei Yang Chou, Bo Liang Yeh, Horng Long Cheng, Shyh Jiun Liu, Bo Yuan Sun, Tzu Hsiu Chou, Yu Hao Chen

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Organic complementary inverters were fabricated by integrating organic p - and n -channel thin film transistors. Bottom-gate and top-contact organic thin film transistors (OTFTs) with polyimide (PI)-modified silicon oxide dielectrics and silver electrodes exhibit similar carrier mobilities, threshold voltages, drain currents, and hysteresis. A gate-bias stress test was performed on both p- and n-type OTFTs. The threshold voltages and hysteresis decreased according to the space charge separation in the PI layer which could be explained by a space charge model. The complementary inverters based on these organic transistors exhibit high noise margins (NMs), a transfer voltage located at VDD /2, and a gain of 40 with supply voltage VDD of +50 V. The electrical stability of the inverters measured during gate-bias stress reveals that the variations in the NMs and transition voltage remained below 5%.

Original languageEnglish
Pages (from-to)H959-H963
JournalJournal of the Electrochemical Society
Volume157
Issue number10
DOIs
Publication statusPublished - 2010 Sep 7

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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