Analysis and numerical simulation of the dual-gate permeable base transistor

Shui-Jinn Wang, F. Y. Yeh, Y. C. Luo, S. L. Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent interest in novel transistor geometries to radically extending the high-frequency limit of three-terminal devices has stimulated the development of ,new technologies for fabricating submicrometer semiconductor structures. One such technology, the lateral growth of single-crystal semiconductor over metals and insulators, has been combined with submicrometer lithography in the fabrication of permeable base transistor (PBT) [1]-The distinguishing feature of PET is a thin tungsten grating which is embedded inside a single crystal semiconductor and is the gate (base) of the transistor. In this article the dud gate is used to reduce the idluence of drain voltage on the input current.

Original languageEnglish
Title of host publicationSMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages59-60
Number of pages2
ISBN (Electronic)0780312252, 9780780312258
DOIs
Publication statusPublished - 1993 Jan 1
Event1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 - Taipei, Taiwan
Duration: 1993 Mar 61993 Mar 7

Publication series

NameSMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation

Conference

Conference1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993
CountryTaiwan
CityTaipei
Period93-03-0693-03-07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Modelling and Simulation

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