@inproceedings{b09811ef21ef49ca9a4f82d19ce2f17b,
title = "Analysis and numerical simulation of the dual-gate permeable base transistor",
abstract = "Recent interest in novel transistor geometries to radically extending the high-frequency limit of three-terminal devices has stimulated the development of ,new technologies for fabricating submicrometer semiconductor structures. One such technology, the lateral growth of single-crystal semiconductor over metals and insulators, has been combined with submicrometer lithography in the fabrication of permeable base transistor (PBT) [1]-The distinguishing feature of PET is a thin tungsten grating which is embedded inside a single crystal semiconductor and is the gate (base) of the transistor. In this article the dud gate is used to reduce the idluence of drain voltage on the input current.",
author = "Shui-Jinn Wang and Yeh, {F. Y.} and Luo, {Y. C.} and Wu, {S. L.}",
year = "1993",
month = jan,
day = "1",
doi = "10.1109/SMS.1993.664553",
language = "English",
series = "SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "59--60",
booktitle = "SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation",
address = "United States",
note = "1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 ; Conference date: 06-03-1993 Through 07-03-1993",
}