Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress

C. C. Hsieh; Tz-Cheng Chiu

doi:10.1109/IMPACT.2012.6420258

Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress

C. C. Hsieh, Tz-Cheng Chiu

Department of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The effect of stress concentration around Cu through-silicon via (TSV) on carrier mobility in typical metal oxide semiconductor field effect transistor (MOSFET) Si inversion layer is considered by using numerical finite element simulation in combination with piezoresistive equations. Carrier mobility changes along <100> or <110> channel directions are obtained for transistors on (001) Si die, and for devices fabricated with either strain-Si or unstrained-Si technology. The analysis shows that the TSV related thermal stress causes a higher mobility shift in p-MOSFET with <110> channels.

Original language	English
Title of host publication	2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings
Pages	351-354
Number of pages	4
DOIs	https://doi.org/10.1109/IMPACT.2012.6420258
Publication status	Published - 2012 Dec 1
Event	2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Taipei, Taiwan Duration: 2012 Oct 24 → 2012 Oct 26

Publication series

Name	Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
ISSN (Print)	2150-5934
ISSN (Electronic)	2150-5942

Other

Other	2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012
Country/Territory	Taiwan
City	Taipei
Period	12-10-24 → 12-10-26

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/IMPACT.2012.6420258

Cite this

Hsieh, C. C., & Chiu, T-C. (2012). Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress. In 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings (pp. 351-354). [6420258] (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT). https://doi.org/10.1109/IMPACT.2012.6420258

Hsieh, C. C. ; Chiu, Tz-Cheng. / Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress. 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings. 2012. pp. 351-354 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT).

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title = "Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress",

abstract = "The effect of stress concentration around Cu through-silicon via (TSV) on carrier mobility in typical metal oxide semiconductor field effect transistor (MOSFET) Si inversion layer is considered by using numerical finite element simulation in combination with piezoresistive equations. Carrier mobility changes along <100> or <110> channel directions are obtained for transistors on (001) Si die, and for devices fabricated with either strain-Si or unstrained-Si technology. The analysis shows that the TSV related thermal stress causes a higher mobility shift in p-MOSFET with <110> channels.",

author = "Hsieh, {C. C.} and Tz-Cheng Chiu",

year = "2012",

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doi = "10.1109/IMPACT.2012.6420258",

language = "English",

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series = "Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT",

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booktitle = "2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings",

note = "2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 ; Conference date: 24-10-2012 Through 26-10-2012",

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Hsieh, CC & Chiu, T-C 2012, Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress. in 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings., 6420258, Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT, pp. 351-354, 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012, Taipei, Taiwan, 12-10-24. https://doi.org/10.1109/IMPACT.2012.6420258

Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress. / Hsieh, C. C.; Chiu, Tz-Cheng.

2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings. 2012. p. 351-354 6420258 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - The effect of stress concentration around Cu through-silicon via (TSV) on carrier mobility in typical metal oxide semiconductor field effect transistor (MOSFET) Si inversion layer is considered by using numerical finite element simulation in combination with piezoresistive equations. Carrier mobility changes along <100> or <110> channel directions are obtained for transistors on (001) Si die, and for devices fabricated with either strain-Si or unstrained-Si technology. The analysis shows that the TSV related thermal stress causes a higher mobility shift in p-MOSFET with <110> channels.

AB - The effect of stress concentration around Cu through-silicon via (TSV) on carrier mobility in typical metal oxide semiconductor field effect transistor (MOSFET) Si inversion layer is considered by using numerical finite element simulation in combination with piezoresistive equations. Carrier mobility changes along <100> or <110> channel directions are obtained for transistors on (001) Si die, and for devices fabricated with either strain-Si or unstrained-Si technology. The analysis shows that the TSV related thermal stress causes a higher mobility shift in p-MOSFET with <110> channels.

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Hsieh CC, Chiu T-C. Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress. In 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings. 2012. p. 351-354. 6420258. (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT). https://doi.org/10.1109/IMPACT.2012.6420258

Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress

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