Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress

C. C. Hsieh, Tz-Cheng Chiu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The effect of stress concentration around Cu through-silicon via (TSV) on carrier mobility in typical metal oxide semiconductor field effect transistor (MOSFET) Si inversion layer is considered by using numerical finite element simulation in combination with piezoresistive equations. Carrier mobility changes along <100> or <110> channel directions are obtained for transistors on (001) Si die, and for devices fabricated with either strain-Si or unstrained-Si technology. The analysis shows that the TSV related thermal stress causes a higher mobility shift in p-MOSFET with <110> channels.

Original languageEnglish
Title of host publication2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings
Pages351-354
Number of pages4
DOIs
Publication statusPublished - 2012 Dec 1
Event2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Taipei, Taiwan
Duration: 2012 Oct 242012 Oct 26

Publication series

NameProceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
ISSN (Print)2150-5934
ISSN (Electronic)2150-5942

Other

Other2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012
CountryTaiwan
CityTaipei
Period12-10-2412-10-26

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress'. Together they form a unique fingerprint.

Cite this