A gate-induced-drain-leakage-induced off-state breakdown is examined in our high-voltage depletion-mode n-channel metal-oxide-semiconductor field-effect transistors. By increasing the dosage in the n-region, a bell-shaped trend between the off-state breakdown voltage VBD and the dosage in the n-region is observed. Such a bell-shaped trend is found to result from two competing factors: an electric field in the gate edge and an electric field associated with the drainbulk junction. The latter electric field is responsible for the falling part in the bell-shaped trend. Our model can explain the data of the slightly bell-shaped trend between off-state VBD and implant energy in the n-region. Additionally, the effect of Si recess variation on off-state VBD variation can be understood from our model. According to our model, approaches to improve off-state VBD and the effect of Si recess variation on VBD variation are proposed.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering