Analysis of GIDL-induced off-state breakdown in high-voltage depletion-mode nMOSFETs

Jone F. Chen, Chin Rung Yan, Yin Chia Lin, Jhen Jhih Fan, Sheng Fu Yang, Wen Chieh Shih

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


A gate-induced-drain-leakage-induced off-state breakdown is examined in our high-voltage depletion-mode n-channel metal-oxide-semiconductor field-effect transistors. By increasing the dosage in the n-region, a bell-shaped trend between the off-state breakdown voltage VBD and the dosage in the n-region is observed. Such a bell-shaped trend is found to result from two competing factors: an electric field in the gate edge and an electric field associated with the drainbulk junction. The latter electric field is responsible for the falling part in the bell-shaped trend. Our model can explain the data of the slightly bell-shaped trend between off-state VBD and implant energy in the n-region. Additionally, the effect of Si recess variation on off-state VBD variation can be understood from our model. According to our model, approaches to improve off-state VBD and the effect of Si recess variation on VBD variation are proposed.

Original languageEnglish
Article number5742996
Pages (from-to)1608-1613
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - 2011 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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