Analysis of GIDL-induced off-state breakdown in high-voltage depletion-mode nMOSFETs

Jone F. Chen; Chin Rung Yan; Yin Chia Lin; Jhen Jhih Fan; Sheng Fu Yang; Wen Chieh Shih

doi:10.1109/TED.2011.2124463

Analysis of GIDL-induced off-state breakdown in high-voltage depletion-mode nMOSFETs

Jone F. Chen, Chin Rung Yan, Yin Chia Lin, Jhen Jhih Fan, Sheng Fu Yang, Wen Chieh Shih

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A gate-induced-drain-leakage-induced off-state breakdown is examined in our high-voltage depletion-mode n-channel metal-oxide-semiconductor field-effect transistors. By increasing the dosage in the n-region, a bell-shaped trend between the off-state breakdown voltage V_BD and the dosage in the n-region is observed. Such a bell-shaped trend is found to result from two competing factors: an electric field in the gate edge and an electric field associated with the drainbulk junction. The latter electric field is responsible for the falling part in the bell-shaped trend. Our model can explain the data of the slightly bell-shaped trend between off-state V_BD and implant energy in the n-region. Additionally, the effect of Si recess variation on off-state V_BD variation can be understood from our model. According to our model, approaches to improve off-state V_BD and the effect of Si recess variation on V_BD variation are proposed.

Original language	English
Article number	5742996
Pages (from-to)	1608-1613
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	6
DOIs	https://doi.org/10.1109/TED.2011.2124463
Publication status	Published - 2011 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2011.2124463

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@article{31a340efd75b450a94bf02a10cd5c9de,

title = "Analysis of GIDL-induced off-state breakdown in high-voltage depletion-mode nMOSFETs",

abstract = "A gate-induced-drain-leakage-induced off-state breakdown is examined in our high-voltage depletion-mode n-channel metal-oxide-semiconductor field-effect transistors. By increasing the dosage in the n-region, a bell-shaped trend between the off-state breakdown voltage VBD and the dosage in the n-region is observed. Such a bell-shaped trend is found to result from two competing factors: an electric field in the gate edge and an electric field associated with the drainbulk junction. The latter electric field is responsible for the falling part in the bell-shaped trend. Our model can explain the data of the slightly bell-shaped trend between off-state VBD and implant energy in the n-region. Additionally, the effect of Si recess variation on off-state VBD variation can be understood from our model. According to our model, approaches to improve off-state VBD and the effect of Si recess variation on VBD variation are proposed.",

author = "Chen, {Jone F.} and Yan, {Chin Rung} and Lin, {Yin Chia} and Fan, {Jhen Jhih} and Yang, {Sheng Fu} and Shih, {Wen Chieh}",

year = "2011",

month = jun,

doi = "10.1109/TED.2011.2124463",

language = "English",

volume = "58",

pages = "1608--1613",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Analysis of GIDL-induced off-state breakdown in high-voltage depletion-mode nMOSFETs

AU - Chen, Jone F.

AU - Yan, Chin Rung

AU - Lin, Yin Chia

AU - Fan, Jhen Jhih

AU - Yang, Sheng Fu

AU - Shih, Wen Chieh

PY - 2011/6

Y1 - 2011/6

N2 - A gate-induced-drain-leakage-induced off-state breakdown is examined in our high-voltage depletion-mode n-channel metal-oxide-semiconductor field-effect transistors. By increasing the dosage in the n-region, a bell-shaped trend between the off-state breakdown voltage VBD and the dosage in the n-region is observed. Such a bell-shaped trend is found to result from two competing factors: an electric field in the gate edge and an electric field associated with the drainbulk junction. The latter electric field is responsible for the falling part in the bell-shaped trend. Our model can explain the data of the slightly bell-shaped trend between off-state VBD and implant energy in the n-region. Additionally, the effect of Si recess variation on off-state VBD variation can be understood from our model. According to our model, approaches to improve off-state VBD and the effect of Si recess variation on VBD variation are proposed.

AB - A gate-induced-drain-leakage-induced off-state breakdown is examined in our high-voltage depletion-mode n-channel metal-oxide-semiconductor field-effect transistors. By increasing the dosage in the n-region, a bell-shaped trend between the off-state breakdown voltage VBD and the dosage in the n-region is observed. Such a bell-shaped trend is found to result from two competing factors: an electric field in the gate edge and an electric field associated with the drainbulk junction. The latter electric field is responsible for the falling part in the bell-shaped trend. Our model can explain the data of the slightly bell-shaped trend between off-state VBD and implant energy in the n-region. Additionally, the effect of Si recess variation on off-state VBD variation can be understood from our model. According to our model, approaches to improve off-state VBD and the effect of Si recess variation on VBD variation are proposed.

UR - http://www.scopus.com/inward/record.url?scp=79957657220&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79957657220&partnerID=8YFLogxK

U2 - 10.1109/TED.2011.2124463

DO - 10.1109/TED.2011.2124463

M3 - Article

AN - SCOPUS:79957657220

SN - 0018-9383

VL - 58

SP - 1608

EP - 1613

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

M1 - 5742996

ER -

Analysis of GIDL-induced off-state breakdown in high-voltage depletion-mode nMOSFETs

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