Analysis of high-voltage metal-oxide-semiconductor transistors with gradual junction in the drift region

The device characteristics and hot-carrier-induced degradation of high-voltage n-type metal-oxide-semiconductor transistors with traditional and gradual junctions in the drift region are studied in this work. The gradual junction used in this study is realized by self-aligned N^- implantation through dual thicknesses of screen oxide during N^- drift implantation. Compared with traditional devices, devices with gradual junctions have improved off-state breakdown voltage (V _BD) without sacrificing on-state driving current and hot-carrier-induced degradation. More improvement in V _BD is observed if the dimensions of the device are larger. The mechanism responsible for V _BD improvement in devices with gradual junctions is also investigated by using technology computer-aided-design simulations.