Analysis of pentacene thin film transistors in different atmospheres

Yu Wu Wang, Horng-Long Cheng, Yi Kai Wang, Tang Hsiang Hu, Jia Chong Ho, Cheng Chung Lee, Tan Fu Lei, Ching Fa Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This investigation addresses the electrical properties of pentacene-based thin film transistors in air, dry air and high vacuum. A potential barrier model was applied to explain the gate dependent field effect mobility behavior. The results show the trap density in air higher than that in a vacuum.

Original languageEnglish
Title of host publicationProceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
EditorsH.P. David Shieh, F.C. Chen
Pages520-522
Number of pages3
Publication statusPublished - 2005 Dec 1
EventInternational Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan
Duration: 2005 Feb 212005 Feb 24

Publication series

NameInternational Display Manufacturing Conference and Exhibition, IDMC'05

Other

OtherInternational Display Manufacturing Conference and Exhibition, IDMC'05
CountryJapan
CityTaipei
Period05-02-2105-02-24

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Analysis of pentacene thin film transistors in different atmospheres'. Together they form a unique fingerprint.

  • Cite this

    Wang, Y. W., Cheng, H-L., Wang, Y. K., Hu, T. H., Ho, J. C., Lee, C. C., Lei, T. F., & Yeh, C. F. (2005). Analysis of pentacene thin film transistors in different atmospheres. In H. P. David Shieh, & F. C. Chen (Eds.), Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05 (pp. 520-522). (International Display Manufacturing Conference and Exhibition, IDMC'05).