Abstract
The hysteresis (extrinsic) and current-voltage (I-V) characteristics of the multiwell, vertically integrated, resonant-tunneling diode are analyzed. Our analysis shows that hysteresis in the vertically integrated diode I-V can result from interchanging the order in which the devices switch, depending if the bias is increasing or decreasing. Experimental results are presented that support this analysis.
Original language | English |
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Pages (from-to) | 2496-2498 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 68 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1990 Dec 1 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy