Analysis of the hysteresis in the I-V characteristics of vertically integrated, multipeaked resonant-tunneling diodes

Tai Haur Kuo, Hung C. Lin, Robert C. Potter, Dave Shupe

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

The hysteresis (extrinsic) and current-voltage (I-V) characteristics of the multiwell, vertically integrated, resonant-tunneling diode are analyzed. Our analysis shows that hysteresis in the vertically integrated diode I-V can result from interchanging the order in which the devices switch, depending if the bias is increasing or decreasing. Experimental results are presented that support this analysis.

Original languageEnglish
Pages (from-to)2496-2498
Number of pages3
JournalJournal of Applied Physics
Volume68
Issue number5
DOIs
Publication statusPublished - 1990 Dec 1

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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