Analytic model for asymmetric trapezoidal-gate MOSFET

C. H. Kao, S. K. Cho, C. T. Wei, S. C. Wong, M. P. Houng, Y. H. Wang

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

The innovative Asymmetric trapezoidal gate( ATG) structure has a relatively narrow drain-side width as compared to the source-side width, giving the trapezoidal shape of ATG MOSFETs. In this paper, an analytic model including the DC drain current and AC dynamic capacitance will be demonstrated. The DC linear/saturation drain current has been derived by Poisson's equation, with Green's function method. The subthreshold current will be also induced by Poisson's equation, with the polynomial function as our main strategy. On the AC dynamic capacitance, we follow Ward and Dutton's channel charge scheme to partition QD and QS, thus all the capacitance can be obtained. Above all, in comparisons with the simulation results, our model are in good agreement with the measurement data. Besides, our model provide an effective and economic way to describe the characteristics of the ATG devices.

Original languageEnglish
Pages420-423
Number of pages4
Publication statusPublished - 1998
EventProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: 1998 Oct 211998 Oct 23

Other

OtherProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period98-10-2198-10-23

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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