A two-dimensional analytic model is proposed for characterizing the current-voltage characteristics and the drain-induced barrier-lowering (DIBL) phenomenon for the InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistor (PDCFET). The significant velocity overshoot effects, associated with the low effective mass in the In0.15Ga0.85 As channel, have been included to analytically solve the two-dimensional Poisson equation. In addition, by solving the nonlinear equations with the Newton method, this model can be extended to provide a straightforward physical expression of the channel potential profile near or within the sub-threshold regime for short-channel effects. Calculations for the device structure with a gate length of 0.25 μm have been conducted, indicating that the pinch-off channel, at a gate-to-source bias of 1.2 V, will resume current conduction as the potential barrier is lowered comparably to the thermal voltage when the drain bias elevates to 2.2 V. This work presents a comprehensive investigation, fast and convenient estimation for the device characteristics and the short-channel effect, and can be extended to multichannel PDCFET structures.
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2004 Dec 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)