Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors

Ching Sung Lee, Wei Chou Hsu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In0.15Ga0.85As channel, have been included to solve the 2D Poisson equation. The theoretical simulation provides a convenient and efficient way to describe the device properties of PDCFET's. The calculated results demonstrate in excellent agreement with the experimental current-voltage characteristics. Device performances with respect to calculations of various structural dimensions have also been extended and investigated.

Original languageEnglish
Pages (from-to)145-158
Number of pages14
JournalSuperlattices and Microstructures
Volume30
Issue number3
DOIs
Publication statusPublished - 2001 Jan 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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