Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors

Ching Sung Lee; Wei Chou Hsu

doi:10.1006/spmi.2001.1005

Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors

Ching Sung Lee, Wei Chou Hsu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In_0.15Ga_0.85As channel, have been included to solve the 2D Poisson equation. The theoretical simulation provides a convenient and efficient way to describe the device properties of PDCFET's. The calculated results demonstrate in excellent agreement with the experimental current-voltage characteristics. Device performances with respect to calculations of various structural dimensions have also been extended and investigated.

Original language	English
Pages (from-to)	145-158
Number of pages	14
Journal	Superlattices and Microstructures
Volume	30
Issue number	3
DOIs	https://doi.org/10.1006/spmi.2001.1005
Publication status	Published - 2001

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.2001.1005

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title = "Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors",

abstract = "A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In0.15Ga0.85As channel, have been included to solve the 2D Poisson equation. The theoretical simulation provides a convenient and efficient way to describe the device properties of PDCFET's. The calculated results demonstrate in excellent agreement with the experimental current-voltage characteristics. Device performances with respect to calculations of various structural dimensions have also been extended and investigated.",

author = "Lee, {Ching Sung} and Hsu, {Wei Chou}",

note = "Funding Information: Acknowledgements— This work was supported by the National Science Council, Republic of China, under the contract number of NSC 89-2215-E-006-033.",

year = "2001",

doi = "10.1006/spmi.2001.1005",

language = "English",

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journal = "Superlattices and Microstructures",

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TY - JOUR

T1 - Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors

AU - Lee, Ching Sung

AU - Hsu, Wei Chou

N1 - Funding Information: Acknowledgements— This work was supported by the National Science Council, Republic of China, under the contract number of NSC 89-2215-E-006-033.

PY - 2001

Y1 - 2001

N2 - A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In0.15Ga0.85As channel, have been included to solve the 2D Poisson equation. The theoretical simulation provides a convenient and efficient way to describe the device properties of PDCFET's. The calculated results demonstrate in excellent agreement with the experimental current-voltage characteristics. Device performances with respect to calculations of various structural dimensions have also been extended and investigated.

AB - A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In0.15Ga0.85As channel, have been included to solve the 2D Poisson equation. The theoretical simulation provides a convenient and efficient way to describe the device properties of PDCFET's. The calculated results demonstrate in excellent agreement with the experimental current-voltage characteristics. Device performances with respect to calculations of various structural dimensions have also been extended and investigated.

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DO - 10.1006/spmi.2001.1005

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JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

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ER -

Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors

Abstract

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